Spin polarisation and non-isotropic effective mass in the conduction band of GdN

Fuente: arXiv
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Autori principali: Holmes-Hewett, W. F., Trewick, E. X. M., Trodahl, H. J., Buckley, R. G., Ruck, B. J.
Natura: Preprint
Pubblicazione: 2024
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author Holmes-Hewett, W. F.
Trewick, E. X. M.
Trodahl, H. J.
Buckley, R. G.
Ruck, B. J.
author_facet Holmes-Hewett, W. F.
Trewick, E. X. M.
Trodahl, H. J.
Buckley, R. G.
Ruck, B. J.
contents GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational study and optical spectroscopy study of the electronic structure of stoichiometric and nitrogen vacancy doped GdN. Based on our calculations we provide the effective mass tensor for undoped GdN, and some indicative values for electron doped GdN. Such a property is valuable as it can directly affect device design, and be directly measured experimentally to validate the existing computation results.
format Preprint
id arxiv_https___arxiv_org_abs_2406_12185
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Spin polarisation and non-isotropic effective mass in the conduction band of GdN
Holmes-Hewett, W. F.
Trewick, E. X. M.
Trodahl, H. J.
Buckley, R. G.
Ruck, B. J.
Materials Science
GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational study and optical spectroscopy study of the electronic structure of stoichiometric and nitrogen vacancy doped GdN. Based on our calculations we provide the effective mass tensor for undoped GdN, and some indicative values for electron doped GdN. Such a property is valuable as it can directly affect device design, and be directly measured experimentally to validate the existing computation results.
title Spin polarisation and non-isotropic effective mass in the conduction band of GdN
topic Materials Science
url https://arxiv.org/abs/2406.12185