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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2406.12743 |
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| _version_ | 1866910493523836928 |
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| author | Segantini, Greta Hsu, Chih-Ying Rischau, Carl Willem Blah, Patrick Matthiesen, Mattias Gariglio, Stefano Triscone, Jean-Marc Alexander, Duncan T. L. Caviglia, Andrea D. |
| author_facet | Segantini, Greta Hsu, Chih-Ying Rischau, Carl Willem Blah, Patrick Matthiesen, Mattias Gariglio, Stefano Triscone, Jean-Marc Alexander, Duncan T. L. Caviglia, Andrea D. |
| contents | The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by non-epitaxial stacking of membranes, opening new possibilities for materials design. Here, we introduce a method for writing, with atomic precision, ionically bonded crystalline material across the gap between an oxide membrane and a carrier substrate. The process involves a thermal pre-treatment, followed by localized exposure to the raster scan of a scanning transmission electron microscopy (STEM) beam. STEM imaging and electron energy-loss spectroscopy show that we achieve atomically sharp interface reconstructions between a 30 nm-thick SrTiO${_3}$ membrane and a niobium-doped SrTiO${_3}$(001)-oriented carrier substrate. These findings indicate new strategies for fabricating synthetic heterostructures with novel structural and electronic properties. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_12743 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electron-Beam Writing of Atomic-Scale Reconstructions at Oxide Interfaces Segantini, Greta Hsu, Chih-Ying Rischau, Carl Willem Blah, Patrick Matthiesen, Mattias Gariglio, Stefano Triscone, Jean-Marc Alexander, Duncan T. L. Caviglia, Andrea D. Materials Science Mesoscale and Nanoscale Physics The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by non-epitaxial stacking of membranes, opening new possibilities for materials design. Here, we introduce a method for writing, with atomic precision, ionically bonded crystalline material across the gap between an oxide membrane and a carrier substrate. The process involves a thermal pre-treatment, followed by localized exposure to the raster scan of a scanning transmission electron microscopy (STEM) beam. STEM imaging and electron energy-loss spectroscopy show that we achieve atomically sharp interface reconstructions between a 30 nm-thick SrTiO${_3}$ membrane and a niobium-doped SrTiO${_3}$(001)-oriented carrier substrate. These findings indicate new strategies for fabricating synthetic heterostructures with novel structural and electronic properties. |
| title | Electron-Beam Writing of Atomic-Scale Reconstructions at Oxide Interfaces |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2406.12743 |