Flexoelectricity in Amorphous Hafnium Oxide (HfO2)
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866912037722914816 |
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| author | Moreno-Garcia, Daniel Howell, Kaitlin M. Villanueva, Luis Guillermo |
| author_facet | Moreno-Garcia, Daniel Howell, Kaitlin M. Villanueva, Luis Guillermo |
| contents | Flexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects from those of piezoelectricity and other phenomena, verifying its universality across all material structures and thicknesses, and establishing a comprehensive database of flexoelectric coefficients across different materials. This work introduces a groundbreaking methodology that accurately isolates flexoelectricity from piezoelectric, electrostrictive and electrostatic effects, with a detection threshold extending below 1 fC/m. The robustness of this method is demonstrated through its application to amorphous hafnium oxide (HfO$_2$), successfully measuring a flexoelectric coefficient of 105 $\pm$ 10 pC/m. This measurement signifies the first measurement of flexoelectricity in hafnia, as well as in any amorphous material. Additionally, the study compiles a list of published flexoelectric coefficients, revealing an important insight. The relationship between the flexoelectric coefficient and the material's relative permittivity is better approximated by a quadratic proportionality. This challenges the traditional linear assumption proposed in Kogan's work and opens new avenues for future research in flexoelectric materials. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2406_13382 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Flexoelectricity in Amorphous Hafnium Oxide (HfO2) Moreno-Garcia, Daniel Howell, Kaitlin M. Villanueva, Luis Guillermo Materials Science Applied Physics Flexoelectricity, inherent in all materials, offers a promising alternative to piezoelectricity for nanoscale actuation and sensing. However, its widespread application faces significant challenges: differentiating flexoelectric effects from those of piezoelectricity and other phenomena, verifying its universality across all material structures and thicknesses, and establishing a comprehensive database of flexoelectric coefficients across different materials. This work introduces a groundbreaking methodology that accurately isolates flexoelectricity from piezoelectric, electrostrictive and electrostatic effects, with a detection threshold extending below 1 fC/m. The robustness of this method is demonstrated through its application to amorphous hafnium oxide (HfO$_2$), successfully measuring a flexoelectric coefficient of 105 $\pm$ 10 pC/m. This measurement signifies the first measurement of flexoelectricity in hafnia, as well as in any amorphous material. Additionally, the study compiles a list of published flexoelectric coefficients, revealing an important insight. The relationship between the flexoelectric coefficient and the material's relative permittivity is better approximated by a quadratic proportionality. This challenges the traditional linear assumption proposed in Kogan's work and opens new avenues for future research in flexoelectric materials. |
| title | Flexoelectricity in Amorphous Hafnium Oxide (HfO2) |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2406.13382 |