Flexoelectricity in Amorphous Hafnium Oxide (HfO2)
Fuente:
arXiv
Saved in:
| Main Authors: | Moreno-Garcia, Daniel, Howell, Kaitlin M., Villanueva, Luis Guillermo |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Effect of Annealing on Flexoelectricity in Hafnium Oxide (HfO2)
by: Moreno-Garcia, Daniel, et al.
Published: (2024)
by: Moreno-Garcia, Daniel, et al.
Published: (2024)
Ferroelectric HfO$_2$-ZrO$_2$ multilayers with reduced wake-up
by: Mandal, Barnik, et al.
Published: (2024)
by: Mandal, Barnik, et al.
Published: (2024)
Measuring direct flexoelectricity at the nanoscale
by: Moreno-Garcia, Daniel, et al.
Published: (2024)
by: Moreno-Garcia, Daniel, et al.
Published: (2024)
Defects in the $β$-Ga$_2$O$_3$($\bar201$)/HfO$_2$ MOS system and the effect of thermal treatments
by: Agrawal, Khushabu. S., et al.
Published: (2025)
by: Agrawal, Khushabu. S., et al.
Published: (2025)
Designing wake-up free ferroelectric capacitors based on the $\mathrm{HfO_2/ZrO_2}$ superlattice structure
by: Bai, Na, et al.
Published: (2022)
by: Bai, Na, et al.
Published: (2022)
Thickness Dependence of Coercive Field in Ferroelectric Doped-Hafnium Oxide
by: Koduru, Revanth, et al.
Published: (2025)
by: Koduru, Revanth, et al.
Published: (2025)
Flexoelectricity causes surface piezoelectric-like effects in dielectrics
by: Mohammadi, H., et al.
Published: (2025)
by: Mohammadi, H., et al.
Published: (2025)
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations
by: Lahkar, Simanta, et al.
Published: (2025)
by: Lahkar, Simanta, et al.
Published: (2025)
Reversible magneto ionics in crystallized W Co20Fe60B20 MgO HfO2 ultra-thin films with perpendicular magnetic anisotropy
by: Chen, Song, et al.
Published: (2025)
by: Chen, Song, et al.
Published: (2025)
Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures
by: Tang, Hongwei, et al.
Published: (2025)
by: Tang, Hongwei, et al.
Published: (2025)
Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions
by: Pappas, David P., et al.
Published: (2024)
by: Pappas, David P., et al.
Published: (2024)
Resistive switching and charge accumulation in Hf0.5Zr0.5O2 nanoparticles
by: Pylypchuk, Oleksandr S., et al.
Published: (2025)
by: Pylypchuk, Oleksandr S., et al.
Published: (2025)
Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials
by: Zalyalov, Timur M., et al.
Published: (2022)
by: Zalyalov, Timur M., et al.
Published: (2022)
Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-based MFIM
by: Kim, Tae Ryong, et al.
Published: (2024)
by: Kim, Tae Ryong, et al.
Published: (2024)
Oxygen Vacancy-Induced Monoclinic Dead Layers in Ferroelectric $Hf_xZr_{1-x}O_2$ With Metal Electrodes
by: Paul, Tanmoy Kumar, et al.
Published: (2024)
by: Paul, Tanmoy Kumar, et al.
Published: (2024)
Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
by: Zhou, Chao, et al.
Published: (2025)
by: Zhou, Chao, et al.
Published: (2025)
Shallow Trap States Control Electrical Performance of Amorphous Oxide Semiconductor Thin-Film Transistors
by: Mattsson, Måns J., et al.
Published: (2026)
by: Mattsson, Måns J., et al.
Published: (2026)
Multiple spiking functionalities in annealing-optimized Ag/Hf$_{0.5}$Zr$_{0.5}$O$_2$-based memristive neurons
by: Zhidkov, Nikita, et al.
Published: (2026)
by: Zhidkov, Nikita, et al.
Published: (2026)
Ferroelectricity of Wurtzite Al$_{1-x}$Hf$_{x}$N Heterovalent Alloys
by: Bernstein, Nate S. P., et al.
Published: (2025)
by: Bernstein, Nate S. P., et al.
Published: (2025)
Photostrictive actuators based on freestanding ferroelectric membranes
by: Ganguly, Saptam, et al.
Published: (2023)
by: Ganguly, Saptam, et al.
Published: (2023)
Tracking visible pulsed laser annealing of Hf$_{0.5}$Zr$_{0.5}$O$_2$ heterostructures with in situ transmission electron microscopy
by: Amini, Aida, et al.
Published: (2026)
by: Amini, Aida, et al.
Published: (2026)
Zr Concentration-Dependent Sub-Lattice Phase-Field Model of Hf1-xZrxO2: Analysis of Phase Composition and Polarization Switching
by: Kim, Tae Ryong, et al.
Published: (2026)
by: Kim, Tae Ryong, et al.
Published: (2026)
A Novel Methodology of Visualizing Orthorhombic Phase Uniformity in Ferroelectric Hf0.5Zr0.5O2 Devices Using Piezoresponse Force Microscopy
by: Peng, Wei-Cheng, et al.
Published: (2025)
by: Peng, Wei-Cheng, et al.
Published: (2025)
Effect of Top Al$_2$O$_3$ Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al$_2$O$_3$/Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_x$/Si (MIFIS) Gate Structure
by: Hu, Tao, et al.
Published: (2024)
by: Hu, Tao, et al.
Published: (2024)
Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure
by: Hu, Tao, et al.
Published: (2024)
by: Hu, Tao, et al.
Published: (2024)
Scalable $\rm Al_2O_3-TiO_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices
by: Li, Yang, et al.
Published: (2022)
by: Li, Yang, et al.
Published: (2022)
Towards Improved Polarization Uniformity in Ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ Devices within Back End of Line Thermal Budget for Memory and Neuromorphic Applications
by: Srivari, Padma, et al.
Published: (2024)
by: Srivari, Padma, et al.
Published: (2024)
Designing high endurance Hf0.5Zr0.5O2 capacitors through engineered recovery from fatigue for non-volatile ferroelectric memory and neuromorphic hardware
by: Li, Xinye, et al.
Published: (2024)
by: Li, Xinye, et al.
Published: (2024)
The coupling of polarization and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 thin films enables electrically controlled thermal memories above room temperature
by: Barneo, Didac, et al.
Published: (2025)
by: Barneo, Didac, et al.
Published: (2025)
High-accuracy inference using HfO$_x$S$_y$/HfS$_2$ Memristors
by: Xhameni, Aferdita, et al.
Published: (2025)
by: Xhameni, Aferdita, et al.
Published: (2025)
Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases
by: Sahni, Bhawna, et al.
Published: (2023)
by: Sahni, Bhawna, et al.
Published: (2023)
Epitaxial formation of ultrathin HfO2 on graphene by sequential oxidation
by: Liu, Zhenjing, et al.
Published: (2025)
by: Liu, Zhenjing, et al.
Published: (2025)
High-Strength Amorphous Silicon Carbide for Nanomechanics
by: Xu, Minxing, et al.
Published: (2023)
by: Xu, Minxing, et al.
Published: (2023)
Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier
by: Islam, Raisul, et al.
Published: (2022)
by: Islam, Raisul, et al.
Published: (2022)
Pulse-Mode Operation and Reliability of BEOL-Compatible Ferroelectric Non-Volatile Capacitive Memories with Amorphous Oxide Semiconductor Channels
by: Lee, Junmo, et al.
Published: (2025)
by: Lee, Junmo, et al.
Published: (2025)
Oxide Membranes from Bulk Micro-Machining of SrTiO$_3$ substrates
by: Manca, Nicola, et al.
Published: (2024)
by: Manca, Nicola, et al.
Published: (2024)
Unexpected Density Functional Dependence of the Antipolar $Pbcn$ Phase in HfO$_2$
by: Fan, Di, et al.
Published: (2025)
by: Fan, Di, et al.
Published: (2025)
HfO2-x Neuromorphic Memristor Based on Tantalum and Molybdenum Electrodes
by: Karatas, Kerem, et al.
Published: (2024)
by: Karatas, Kerem, et al.
Published: (2024)
Tailoring the Opto-Electronic Properties of Oxide-Metal-Oxide Transparent Electrode Using Cu Seed Layer
by: Chandrakar, Nikky
Published: (2023)
by: Chandrakar, Nikky
Published: (2023)
High- and medium-entropy nitride coatings from the Cr-Hf-Mo-Ta-W-N system: properties and high-temperature stability
by: Souček, Pavel, et al.
Published: (2025)
by: Souček, Pavel, et al.
Published: (2025)
Similar Items
-
Effect of Annealing on Flexoelectricity in Hafnium Oxide (HfO2)
by: Moreno-Garcia, Daniel, et al.
Published: (2024) -
Ferroelectric HfO$_2$-ZrO$_2$ multilayers with reduced wake-up
by: Mandal, Barnik, et al.
Published: (2024) -
Measuring direct flexoelectricity at the nanoscale
by: Moreno-Garcia, Daniel, et al.
Published: (2024) -
Defects in the $β$-Ga$_2$O$_3$($\bar201$)/HfO$_2$ MOS system and the effect of thermal treatments
by: Agrawal, Khushabu. S., et al.
Published: (2025) -
Designing wake-up free ferroelectric capacitors based on the $\mathrm{HfO_2/ZrO_2}$ superlattice structure
by: Bai, Na, et al.
Published: (2022)