A 1.8-um pitch, 47-ps jitter SPAD Array in 130nm SiGe BiCMOS Process
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , |
|---|---|
| Format: | Preprint |
| Publié: |
2024
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866913493579464704 |
|---|---|
| author | Liu, Feng Charbon, Edoardo |
| author_facet | Liu, Feng Charbon, Edoardo |
| contents | We introduce the world's first SPAD family design in 130 nm SiGe BiCMOS process. At 1.8um, we achieved the smallest pitch on record thanks to guard-ring sharing techniques, while keeping a relatively high fill factor of 24.2%. 4x4 SPAD arrays with two parallel selective readout circuits were designed to explore crosstalk and scalability. The SPAD family has a minimum breakdown voltage of 11 V, a maximum PDP of 40.6% and a typical timing jitter of 47 ps FWHM. The development of silicon SPADs in SiGe process paves the way to Ge-on-Si SPADs for SWIR applications, and to cryogenic optical interfaces for quantum applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_13686 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | A 1.8-um pitch, 47-ps jitter SPAD Array in 130nm SiGe BiCMOS Process Liu, Feng Charbon, Edoardo Instrumentation and Detectors We introduce the world's first SPAD family design in 130 nm SiGe BiCMOS process. At 1.8um, we achieved the smallest pitch on record thanks to guard-ring sharing techniques, while keeping a relatively high fill factor of 24.2%. 4x4 SPAD arrays with two parallel selective readout circuits were designed to explore crosstalk and scalability. The SPAD family has a minimum breakdown voltage of 11 V, a maximum PDP of 40.6% and a typical timing jitter of 47 ps FWHM. The development of silicon SPADs in SiGe process paves the way to Ge-on-Si SPADs for SWIR applications, and to cryogenic optical interfaces for quantum applications. |
| title | A 1.8-um pitch, 47-ps jitter SPAD Array in 130nm SiGe BiCMOS Process |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2406.13686 |