Structural and Electronic Properties of Amorphous Silicon and Germanium Monolayers and Nanotubes: A DFT Investigation

Fuente: arXiv
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Hauptverfasser: Tromer, Raphael M., Junior, Marcelo L. Pereira, Junior, Luiz. A. Ribeiro, Galvão, Douglas S.
Format: Preprint
Veröffentlicht: 2024
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author Tromer, Raphael M.
Junior, Marcelo L. Pereira
Junior, Luiz. A. Ribeiro
Galvão, Douglas S.
author_facet Tromer, Raphael M.
Junior, Marcelo L. Pereira
Junior, Luiz. A. Ribeiro
Galvão, Douglas S.
contents A recent breakthrough has been achieved by synthesizing monolayer amorphous carbon (MAC), which introduces a material with unique optoelectronic properties. Here, we used ab initio (DFT) molecular dynamics simulations to study silicon and germanium MAC analogs. Typical unit cells contain more than 600 atoms. We also considered their corresponding nanotube structures. The cohesion energy values for MASi and MAGe range from -8.41 to -7.49 eV/atom and follow the energy ordering of silicene and germanene. Their electronic behavior varies from metallic to small band gap semiconductors. Since silicene, germanene, and MAC have already been experimentally realized, the corresponding MAC-like versions we propose are within our present synthetic capabilities.
format Preprint
id arxiv_https___arxiv_org_abs_2406_13769
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Structural and Electronic Properties of Amorphous Silicon and Germanium Monolayers and Nanotubes: A DFT Investigation
Tromer, Raphael M.
Junior, Marcelo L. Pereira
Junior, Luiz. A. Ribeiro
Galvão, Douglas S.
Materials Science
00-XX
J.2; I.6
A recent breakthrough has been achieved by synthesizing monolayer amorphous carbon (MAC), which introduces a material with unique optoelectronic properties. Here, we used ab initio (DFT) molecular dynamics simulations to study silicon and germanium MAC analogs. Typical unit cells contain more than 600 atoms. We also considered their corresponding nanotube structures. The cohesion energy values for MASi and MAGe range from -8.41 to -7.49 eV/atom and follow the energy ordering of silicene and germanene. Their electronic behavior varies from metallic to small band gap semiconductors. Since silicene, germanene, and MAC have already been experimentally realized, the corresponding MAC-like versions we propose are within our present synthetic capabilities.
title Structural and Electronic Properties of Amorphous Silicon and Germanium Monolayers and Nanotubes: A DFT Investigation
topic Materials Science
00-XX
J.2; I.6
url https://arxiv.org/abs/2406.13769