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| Format: | Preprint |
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2024
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| Online-Zugang: | https://arxiv.org/abs/2406.13950 |
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| _version_ | 1866910495412322304 |
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| author | Guo, San-Dong Liu, Yichen Liu, Cheng-Cheng |
| author_facet | Guo, San-Dong Liu, Yichen Liu, Cheng-Cheng |
| contents | The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for altermagnetism of any type, such as $d$-wave, $g$-wave, and $i$-wave, by choosing the constituent monolayer with specific symmetry [arXiv:2404.17146 (2024)]. Here, we propose a way for achieving valley polarization in twisted altermagnetism by applying out-of-plane external electric field. Since the out-of-plane electric field creates a layer-dependent electrostatic potential, the valleys form different layers will stagger, producing valley polarization. We also demonstrate the effectiveness of our proposed way using the twisted tight-binding model. It is found that the applied electric field can also induce valley/spin-gapless semiconductor and half metal besides valley polarization. Based on first-principles calculations, our proposed way to achieve valley polarization can be verified in twisted bilayer VOBr and monolayer $\mathrm{Ca(CoN)_2}$ as a special twisted altermagnet. These findings provide new opportunities for innovative spintronics, twistronics and valleytronics applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_13950 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Valley polarization in twisted altermagnetism Guo, San-Dong Liu, Yichen Liu, Cheng-Cheng Materials Science The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for altermagnetism of any type, such as $d$-wave, $g$-wave, and $i$-wave, by choosing the constituent monolayer with specific symmetry [arXiv:2404.17146 (2024)]. Here, we propose a way for achieving valley polarization in twisted altermagnetism by applying out-of-plane external electric field. Since the out-of-plane electric field creates a layer-dependent electrostatic potential, the valleys form different layers will stagger, producing valley polarization. We also demonstrate the effectiveness of our proposed way using the twisted tight-binding model. It is found that the applied electric field can also induce valley/spin-gapless semiconductor and half metal besides valley polarization. Based on first-principles calculations, our proposed way to achieve valley polarization can be verified in twisted bilayer VOBr and monolayer $\mathrm{Ca(CoN)_2}$ as a special twisted altermagnet. These findings provide new opportunities for innovative spintronics, twistronics and valleytronics applications. |
| title | Valley polarization in twisted altermagnetism |
| topic | Materials Science |
| url | https://arxiv.org/abs/2406.13950 |