Individually Addressed Entangling Gates in a Two-Dimensional Ion Crystal

Fuente: arXiv
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Hauptverfasser: Hou, Y. -H., Yi, Y. -J., Wu, Y. -K., Chen, Y. -Y., Zhang, L., Wang, Y., Xu, Y. -L., Zhang, C., Mei, Q. -X., Yang, H. -X., Ma, J. -Y., Guo, S. -A., Ye, J., Qi, B. -X., Zhou, Z. -C., Hou, P. -Y., Duan, L. -M.
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Veröffentlicht: 2024
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author Hou, Y. -H.
Yi, Y. -J.
Wu, Y. -K.
Chen, Y. -Y.
Zhang, L.
Wang, Y.
Xu, Y. -L.
Zhang, C.
Mei, Q. -X.
Yang, H. -X.
Ma, J. -Y.
Guo, S. -A.
Ye, J.
Qi, B. -X.
Zhou, Z. -C.
Hou, P. -Y.
Duan, L. -M.
author_facet Hou, Y. -H.
Yi, Y. -J.
Wu, Y. -K.
Chen, Y. -Y.
Zhang, L.
Wang, Y.
Xu, Y. -L.
Zhang, C.
Mei, Q. -X.
Yang, H. -X.
Ma, J. -Y.
Guo, S. -A.
Ye, J.
Qi, B. -X.
Zhou, Z. -C.
Hou, P. -Y.
Duan, L. -M.
contents Two-dimensional (2D) ion crystals have become a promising way to scale up qubit numbers for ion trap quantum information processing. However, to realize universal quantum computing in this system, individually addressed high-fidelity two-qubit entangling gates still remain challenging due to the inevitable micromotion of ions in a 2D crystal as well as the technical difficulty in 2D addressing. Here we demonstrate two-qubit entangling gates between any ion pairs in a 2D crystal of four ions. We use symmetrically placed crossed acousto-optic deflectors (AODs) to drive Raman transitions and achieve an addressing crosstalk error below 0.1%. We design and demonstrate a gate sequence by alternatingly addressing two target ions, making it compatible with any single-ion addressing techniques without crosstalk from multiple addressing beams. We further examine the gate performance versus the micromotion amplitude of the ions and show that its effect can be compensated by a recalibration of the laser intensity without degrading the gate fidelity. Our work paves the way for ion trap quantum computing with hundreds to thousands of qubits on a 2D ion crystal.
format Preprint
id arxiv_https___arxiv_org_abs_2406_13999
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Individually Addressed Entangling Gates in a Two-Dimensional Ion Crystal
Hou, Y. -H.
Yi, Y. -J.
Wu, Y. -K.
Chen, Y. -Y.
Zhang, L.
Wang, Y.
Xu, Y. -L.
Zhang, C.
Mei, Q. -X.
Yang, H. -X.
Ma, J. -Y.
Guo, S. -A.
Ye, J.
Qi, B. -X.
Zhou, Z. -C.
Hou, P. -Y.
Duan, L. -M.
Quantum Physics
Two-dimensional (2D) ion crystals have become a promising way to scale up qubit numbers for ion trap quantum information processing. However, to realize universal quantum computing in this system, individually addressed high-fidelity two-qubit entangling gates still remain challenging due to the inevitable micromotion of ions in a 2D crystal as well as the technical difficulty in 2D addressing. Here we demonstrate two-qubit entangling gates between any ion pairs in a 2D crystal of four ions. We use symmetrically placed crossed acousto-optic deflectors (AODs) to drive Raman transitions and achieve an addressing crosstalk error below 0.1%. We design and demonstrate a gate sequence by alternatingly addressing two target ions, making it compatible with any single-ion addressing techniques without crosstalk from multiple addressing beams. We further examine the gate performance versus the micromotion amplitude of the ions and show that its effect can be compensated by a recalibration of the laser intensity without degrading the gate fidelity. Our work paves the way for ion trap quantum computing with hundreds to thousands of qubits on a 2D ion crystal.
title Individually Addressed Entangling Gates in a Two-Dimensional Ion Crystal
topic Quantum Physics
url https://arxiv.org/abs/2406.13999