Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor

Fuente: arXiv
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Main Authors: Xiong, Junlin, Xie, Jiao, Cheng, Bin, Dai, Yudi, Cui, Xinyu, Wang, Lizheng, Liu, Zenglin, Zhou, Ji, Wang, Naizhou, Xu, Xianghan, Chen, Xianhui, Cheong, Sang-Wook, Liang, Shi-Jun, Miao, Feng
Format: Preprint
Published: 2024
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author Xiong, Junlin
Xie, Jiao
Cheng, Bin
Dai, Yudi
Cui, Xinyu
Wang, Lizheng
Liu, Zenglin
Zhou, Ji
Wang, Naizhou
Xu, Xianghan
Chen, Xianhui
Cheong, Sang-Wook
Liang, Shi-Jun
Miao, Feng
author_facet Xiong, Junlin
Xie, Jiao
Cheng, Bin
Dai, Yudi
Cui, Xinyu
Wang, Lizheng
Liu, Zenglin
Zhou, Ji
Wang, Naizhou
Xu, Xianghan
Chen, Xianhui
Cheong, Sang-Wook
Liang, Shi-Jun
Miao, Feng
contents Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices.
format Preprint
id arxiv_https___arxiv_org_abs_2406_14417
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor
Xiong, Junlin
Xie, Jiao
Cheng, Bin
Dai, Yudi
Cui, Xinyu
Wang, Lizheng
Liu, Zenglin
Zhou, Ji
Wang, Naizhou
Xu, Xianghan
Chen, Xianhui
Cheong, Sang-Wook
Liang, Shi-Jun
Miao, Feng
Mesoscale and Nanoscale Physics
Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing electrical switching of the polarity of the nonreciprocal transport without external magnetic field is essential to the development of nonreciprocal quantum devices. However, electrical switching of superconducting nonreciprocity remains yet to be achieved. Here, we report the observation of field-free electrical switching of nonreciprocal Ising superconductivity in Fe3GeTe2/NbSe2 van der Waals (vdW) heterostructure. By taking advantage of this electrically switchable superconducting nonreciprocity, we demonstrate a proof-of-concept nonreciprocal quantum neuronal transistor, which allows for implementing the XOR logic gate and faithfully emulating biological functionality of a cortical neuron in the brain. Our work provides a promising pathway to realize field-free and electrically switchable nonreciprocity of quantum transport and demonstrate its potential in exploring neuromorphic quantum devices with both functionality and performance beyond the traditional devices.
title Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2406.14417