Cover Image

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Mudiyanselage, Dinusha Herath, Wang, Dawei, He, Ziyi, Da, Bingcheng, Fu, Houqiang
Format:	Preprint
Published:	2024
Subjects:	Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Ultrawide Bandgap Lateral AlN Schottky Barrier Diodes With Graded AlGaN Contact Layer on Single‐Crystal AlN Substrate
by: Junzhe Xie, et al.
Published: (2025)

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
by: Hamid, Md Abdul, et al.
Published: (2026)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
by: Chen, Yu-Hsin, et al.
Published: (2025)

AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics
by: Gündogdu, Sinan, et al.
Published: (2023)

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
by: Kim, Eungkyun, et al.
Published: (2025)

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
by: Buatip, N., et al.
Published: (2024)

Tracking the creation of single photon emitters in AlN by implantation and annealing
by: Yağcı, H. B., et al.
Published: (2025)

Experimental observation of ballistic to diffusive transition in AlN thin films
by: Hoque, Md Shafkat Bin, et al.
Published: (2024)

Development of TiN/AlN-based superconducting qubit components
by: Schoof, Benedikt, et al.
Published: (2024)

Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
by: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Published: (2025)

Self-injection locking dynamics with Raman actions in AlN microresonators
by: Ding, Yulei, et al.
Published: (2025)

Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles
by: Wang, Ruiqing, et al.
Published: (2025)

Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
by: Lu, Yi, et al.
Published: (2026)

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
by: Pampili, Pietro, et al.
Published: (2024)

Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
by: Gulupalli, Hemant, et al.
Published: (2026)

Thin Film AlN Microbolometer for Very Long-Wave Infrared Detection
by: Tallavajhula, Vivek, et al.
Published: (2026)

A Liquid Density Sensor Based On AlN Piezoelectric Micromachined Ultrasonic Transmitter Insensitive to Liquid Viscosity
by: Fu, Xuecong, et al.
Published: (2026)

Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
by: Huang, H-W S., et al.
Published: (2025)

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
by: Cardinael, Pieter, et al.
Published: (2024)

Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion
by: Yao, Ziqian, et al.
Published: (2026)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
by: Abbasi, Haris Naeem, et al.
Published: (2024)

Nanomechanical crystalline AlN resonators with high quality factors for quantum optoelectromechanics
by: Ciers, Anastasiia, et al.
Published: (2024)

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
by: Singhal, Jashan, et al.
Published: (2022)

High-efficiency, cryogenic-compatible grating couplers on an AlN-on-sapphire platform through bottom-side coupling
by: Zhou, Yiyu, et al.
Published: (2024)

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
by: Mukhopadhyay, Swarnav, et al.
Published: (2023)

A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
by: Jamil, Tariq, et al.
Published: (2026)

Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
by: Kim, Minho, et al.
Published: (2025)

Far-UVC Field Emission Device at 226 nm and its Sub-Nanometer thick GaN/AlN Quantum Well Anode
by: Boiko, D. L., et al.
Published: (2025)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)

Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
by: Dinh, Duc V., et al.
Published: (2025)

Sputtered AlN buffer layer for low-loss crystalline AlN-on-sapphire integrated photonics
by: Brunetta, Samuele, et al.
Published: (2025)

Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures
by: Taketo Kowaki, et al.
Published: (2024)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
by: Matys, Maciej, et al.
Published: (2024)

Luminescent AlN Semiconductor Nanocrystals
by: Hannah F. Gaiser, et al.
Published: (2025)

Oxidation behavior of SiC‐AlN ceramics exposed to dry oxygen and water oxygen environments at 1100–1300°C
by: Xiaofan Sun, et al.
Published: (2024)

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
by: Gačević, Ž., et al.
Published: (2024)

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
by: Mukhopadhyay, Swarnav, et al.
Published: (2024)

Análisis elipsométrico de nanoestructuras híbridas Semiconductor/Metal: Co/AlN/AL2O3 y AlN/Co/AlN/AL2O3
by: Fermin, José R., et al.
Published: (2017)

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes
by: Jimy Encomendero, et al.
Published: (2026)

Deep‐Ultraviolet Luminescence Properties of AlN
by: Ryota Ishii, et al.
Published: (2024)