Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

Fuente: arXiv
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Main Authors: Pasquale, Gabriele, Sun, Zhe, Watanabe, Kenji, Taniguchi, Takashi, Kis, Andras
Format: Preprint
Published: 2024
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author Pasquale, Gabriele
Sun, Zhe
Watanabe, Kenji
Taniguchi, Takashi
Kis, Andras
author_facet Pasquale, Gabriele
Sun, Zhe
Watanabe, Kenji
Taniguchi, Takashi
Kis, Andras
contents The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena.
format Preprint
id arxiv_https___arxiv_org_abs_2406_16194
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
Pasquale, Gabriele
Sun, Zhe
Watanabe, Kenji
Taniguchi, Takashi
Kis, Andras
Mesoscale and Nanoscale Physics
Materials Science
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena.
title Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2406.16194