Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866914846852775936 |
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| author | Pasquale, Gabriele Sun, Zhe Watanabe, Kenji Taniguchi, Takashi Kis, Andras |
| author_facet | Pasquale, Gabriele Sun, Zhe Watanabe, Kenji Taniguchi, Takashi Kis, Andras |
| contents | The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2406_16194 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures Pasquale, Gabriele Sun, Zhe Watanabe, Kenji Taniguchi, Takashi Kis, Andras Mesoscale and Nanoscale Physics Materials Science The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena. |
| title | Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2406.16194 |