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Main Authors: Zhou, Guangdi, Huang, Haoliang, Wang, Fengzhe, Wang, Heng, Yang, Qishuo, Nie, Zihao, Lv, Wei, Ding, Cui, Li, Yueying, Lin, Jiayi, Yue, Changming, Li, Danfeng, Sun, Yujie, Lin, Junhao, Zhang, Guang-Ming, Xue, Qi-Kun, Chen, Zhuoyu
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2406.16520
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author Zhou, Guangdi
Huang, Haoliang
Wang, Fengzhe
Wang, Heng
Yang, Qishuo
Nie, Zihao
Lv, Wei
Ding, Cui
Li, Yueying
Lin, Jiayi
Yue, Changming
Li, Danfeng
Sun, Yujie
Lin, Junhao
Zhang, Guang-Ming
Xue, Qi-Kun
Chen, Zhuoyu
author_facet Zhou, Guangdi
Huang, Haoliang
Wang, Fengzhe
Wang, Heng
Yang, Qishuo
Nie, Zihao
Lv, Wei
Ding, Cui
Li, Yueying
Lin, Jiayi
Yue, Changming
Li, Danfeng
Sun, Yujie
Lin, Junhao
Zhang, Guang-Ming
Xue, Qi-Kun
Chen, Zhuoyu
contents In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, growth kinetics, and stoichiometry precision, particularly for metastable phases. We introduce a methodology, namely the gigantic-oxidative atomic-layer-by-layer epitaxy (GOALL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond conventional pulsed laser deposition (PLD) and oxide molecular beam epitaxy (OMBE), while ensuring atomic-layer-by-layer growth of designed complex structures. Thermodynamic stability is markedly augmented with stronger oxidation at elevated temperatures, whereas growth kinetics is sustained by laser ablation at lower temperatures. We demonstrate the accurate growth of complex nickelates and cuprates, especially an artificially designed structure with alternating single and double NiO2 layers possessing distinct nominal d-orbital occupancy, as a parent of high-temperature superconductor. The GOALL-Epitaxy enables material discovery within the vastly broadened growth parameter space.
format Preprint
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institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides
Zhou, Guangdi
Huang, Haoliang
Wang, Fengzhe
Wang, Heng
Yang, Qishuo
Nie, Zihao
Lv, Wei
Ding, Cui
Li, Yueying
Lin, Jiayi
Yue, Changming
Li, Danfeng
Sun, Yujie
Lin, Junhao
Zhang, Guang-Ming
Xue, Qi-Kun
Chen, Zhuoyu
Strongly Correlated Electrons
Materials Science
Superconductivity
In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, growth kinetics, and stoichiometry precision, particularly for metastable phases. We introduce a methodology, namely the gigantic-oxidative atomic-layer-by-layer epitaxy (GOALL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond conventional pulsed laser deposition (PLD) and oxide molecular beam epitaxy (OMBE), while ensuring atomic-layer-by-layer growth of designed complex structures. Thermodynamic stability is markedly augmented with stronger oxidation at elevated temperatures, whereas growth kinetics is sustained by laser ablation at lower temperatures. We demonstrate the accurate growth of complex nickelates and cuprates, especially an artificially designed structure with alternating single and double NiO2 layers possessing distinct nominal d-orbital occupancy, as a parent of high-temperature superconductor. The GOALL-Epitaxy enables material discovery within the vastly broadened growth parameter space.
title Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides
topic Strongly Correlated Electrons
Materials Science
Superconductivity
url https://arxiv.org/abs/2406.16520