Ultrafast (10 GHz) mid-IR modulator based on ultra-fast electrical switching of the light-matter coupling
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909390331707392 |
|---|---|
| author | Malerba, Mario Pirotta, Stefano Aubin, Guy Lucia, Luca Jeannin, Mathieu Manceau, Jean-Michel Bousseksou, Adel Lin, Quyang Lampin, Jean-Francois Peytavit, Emilien Barbieri, Stefano Li, Lianhe Davies, Giles Linfield, Edmund H. Colombelli, Raffaele |
| author_facet | Malerba, Mario Pirotta, Stefano Aubin, Guy Lucia, Luca Jeannin, Mathieu Manceau, Jean-Michel Bousseksou, Adel Lin, Quyang Lampin, Jean-Francois Peytavit, Emilien Barbieri, Stefano Li, Lianhe Davies, Giles Linfield, Edmund H. Colombelli, Raffaele |
| contents | We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast transition between weak and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal-metal optical resonators, that - all-together - behave as an electrically tunable surface. At negative bias, it operates in the weak light-matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons and the device transitions to the strong-coupling regime. The modulator transmission keeps linear with input RF power in the 0dBm - 9dBm range. The increase of optical powers up to 25 mW exhibit a weak beginning saturation a little bit below. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_18097 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ultrafast (10 GHz) mid-IR modulator based on ultra-fast electrical switching of the light-matter coupling Malerba, Mario Pirotta, Stefano Aubin, Guy Lucia, Luca Jeannin, Mathieu Manceau, Jean-Michel Bousseksou, Adel Lin, Quyang Lampin, Jean-Francois Peytavit, Emilien Barbieri, Stefano Li, Lianhe Davies, Giles Linfield, Edmund H. Colombelli, Raffaele Applied Physics Mesoscale and Nanoscale Physics Optics We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast transition between weak and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal-metal optical resonators, that - all-together - behave as an electrically tunable surface. At negative bias, it operates in the weak light-matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons and the device transitions to the strong-coupling regime. The modulator transmission keeps linear with input RF power in the 0dBm - 9dBm range. The increase of optical powers up to 25 mW exhibit a weak beginning saturation a little bit below. |
| title | Ultrafast (10 GHz) mid-IR modulator based on ultra-fast electrical switching of the light-matter coupling |
| topic | Applied Physics Mesoscale and Nanoscale Physics Optics |
| url | https://arxiv.org/abs/2406.18097 |