Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)

Fuente: arXiv

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Bibliographic Details
Main Authors:	Dempsey, C. P., Dong, J. T., Rodriguez, I. Villar, Gul, Y., Chatterjee, S., Pendharkar, M., Holmes, S. N., Pepper, M., Palmstrøm, C. J.
Format:	Preprint
Published:	2024
Subjects:	Mesoscale and Nanoscale Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2406.19469