Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2406.19618 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866909232916332544 |
|---|---|
| author | Kuk, Song-Hyeon Ko, Kyul Kim, Bong Ho Han, Jae-Hoon Kim, Sang-Hyeon |
| author_facet | Kuk, Song-Hyeon Ko, Kyul Kim, Bong Ho Han, Jae-Hoon Kim, Sang-Hyeon |
| contents | Ferroelectric field-effect-transistor (FEFET) has emerged as a scalable solution for 3D NAND and embedded flash (eFlash), with recent progress in achieving large memory window (MW) using metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) gate stacks. Although the physical origin of the large MW in the MIFIS stack has already been discussed, its retention characteristics have not been explored yet. Here, we demonstrate MIFIS FEFET with a maximum MW of 9.7 V, and show that MIFIS FEFET has unstable retention characteristics, especially after erase. We discover the origin of the unstable retention characteristics and prove our hypothesis with absolute polarization measurement and different operation modes, showing that the unstable retention characteristics is a fundamental issue. Based on the understanding, we discuss a novel charge compensation model and promising engineering methodologies to achieve stable retention in MIFIS FEFET. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_19618 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement Kuk, Song-Hyeon Ko, Kyul Kim, Bong Ho Han, Jae-Hoon Kim, Sang-Hyeon Materials Science Ferroelectric field-effect-transistor (FEFET) has emerged as a scalable solution for 3D NAND and embedded flash (eFlash), with recent progress in achieving large memory window (MW) using metal-insulator-ferroelectric-insulator-semiconductor (MIFIS) gate stacks. Although the physical origin of the large MW in the MIFIS stack has already been discussed, its retention characteristics have not been explored yet. Here, we demonstrate MIFIS FEFET with a maximum MW of 9.7 V, and show that MIFIS FEFET has unstable retention characteristics, especially after erase. We discover the origin of the unstable retention characteristics and prove our hypothesis with absolute polarization measurement and different operation modes, showing that the unstable retention characteristics is a fundamental issue. Based on the understanding, we discuss a novel charge compensation model and promising engineering methodologies to achieve stable retention in MIFIS FEFET. |
| title | Unstable Retention Behavior in MIFIS FEFET: Accurate Analysis of the Origin by Absolute Polarization Measurement |
| topic | Materials Science |
| url | https://arxiv.org/abs/2406.19618 |