Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866909233009655808 |
|---|---|
| author | Watson, Matthew D. Date, Mihir Louat, Alex Schröter, Niels B. M. |
| author_facet | Watson, Matthew D. Date, Mihir Louat, Alex Schröter, Niels B. M. |
| contents | We show that in some transition metal dichalcogenides, minority regions of the cleaved sample surfaces show - unexpectedly and anomalously - a finite number of 2D electronic states instead of the expected 3D valence bands. In the case of NbS\textsubscript{2}, in addition to the typical spectrum associated with bulk 2Ha stacking, we also find minority regions with electronic structures consistent with few-layers of 3R stacking. In MoS\textsubscript{2} we find areas of both bulk 2Hc and 3R stackings, and regions exhibiting finite-layer quantisation of both types. We further find evidence for a more exotic 4Ha stacking of MoS\textsubscript{2}, in which the valence band maximum is quasi-2D. The results highlight how variation of the interlayer stacking of van der Waals materials beyond the commonly-reported bulk polytypes can yield novel electronic structures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_19793 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$ Watson, Matthew D. Date, Mihir Louat, Alex Schröter, Niels B. M. Strongly Correlated Electrons Materials Science We show that in some transition metal dichalcogenides, minority regions of the cleaved sample surfaces show - unexpectedly and anomalously - a finite number of 2D electronic states instead of the expected 3D valence bands. In the case of NbS\textsubscript{2}, in addition to the typical spectrum associated with bulk 2Ha stacking, we also find minority regions with electronic structures consistent with few-layers of 3R stacking. In MoS\textsubscript{2} we find areas of both bulk 2Hc and 3R stackings, and regions exhibiting finite-layer quantisation of both types. We further find evidence for a more exotic 4Ha stacking of MoS\textsubscript{2}, in which the valence band maximum is quasi-2D. The results highlight how variation of the interlayer stacking of van der Waals materials beyond the commonly-reported bulk polytypes can yield novel electronic structures. |
| title | Novel electronic structures from anomalous stackings in NbS$_2$ and MoS$_2$ |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2406.19793 |