High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding
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arXiv
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866916605301096448 |
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| author | Franken, Cornelis A. A. Cheng, Rebecca Powell, Keith Kyriazidis, Georgios Rosborough, Victoria Musolf, Juergen Shah, Maximilian Barton III, David R. Hills, Gage Johansson, Leif Boller, Klaus-J. Lončar, Marko |
| author_facet | Franken, Cornelis A. A. Cheng, Rebecca Powell, Keith Kyriazidis, Georgios Rosborough, Victoria Musolf, Juergen Shah, Maximilian Barton III, David R. Hills, Gage Johansson, Leif Boller, Klaus-J. Lončar, Marko |
| contents | Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications rely on the integration of multiple components onto a single platform. However, while many of these components have already been demonstrated on the TFLN platform, to date, a major bottleneck of the platform is the existence of a tunable, high-power, and narrow-linewidth on-chip laser. Here, we address this problem using photonic wire bonding to integrate optical amplifiers with a thin-film lithium niobate feedback circuit, and demonstrate an extended cavity diode laser yielding high on-chip power of 78 mW, side mode suppression larger than 60 dB and wide wavelength tunability over 43 nm. The laser frequency stability over short timescales shows an ultra-narrow intrinsic linewidth of 550 Hz. Long-term recordings indicate a high passive stability of the photonic wire bonded laser with 58 hours of mode-hop-free operation, with a trend in the frequency drift of only 4.4 MHz/h. This work verifies photonic wire bonding as a viable integration solution for high performance on-chip lasers, opening the path to system level upscaling and Watt-level output powers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_00269 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding Franken, Cornelis A. A. Cheng, Rebecca Powell, Keith Kyriazidis, Georgios Rosborough, Victoria Musolf, Juergen Shah, Maximilian Barton III, David R. Hills, Gage Johansson, Leif Boller, Klaus-J. Lončar, Marko Optics Applied Physics Thin-film lithium niobate (TFLN) has emerged as a promising platform for the realization of high performance chip-scale optical systems, spanning a range of applications from optical communications to microwave photonics. Such applications rely on the integration of multiple components onto a single platform. However, while many of these components have already been demonstrated on the TFLN platform, to date, a major bottleneck of the platform is the existence of a tunable, high-power, and narrow-linewidth on-chip laser. Here, we address this problem using photonic wire bonding to integrate optical amplifiers with a thin-film lithium niobate feedback circuit, and demonstrate an extended cavity diode laser yielding high on-chip power of 78 mW, side mode suppression larger than 60 dB and wide wavelength tunability over 43 nm. The laser frequency stability over short timescales shows an ultra-narrow intrinsic linewidth of 550 Hz. Long-term recordings indicate a high passive stability of the photonic wire bonded laser with 58 hours of mode-hop-free operation, with a trend in the frequency drift of only 4.4 MHz/h. This work verifies photonic wire bonding as a viable integration solution for high performance on-chip lasers, opening the path to system level upscaling and Watt-level output powers. |
| title | High-power and narrow-linewidth laser on thin-film lithium niobate enabled by photonic wire bonding |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2407.00269 |