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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2407.01339 |
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| _version_ | 1866910770967609344 |
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| author | Puri, S. Patel, S. Cabellos, J. L. Rosas-Hernandez, L. E. Barraza-Lopez, S. Mendoza, B. Nakamura, H. |
| author_facet | Puri, S. Patel, S. Cabellos, J. L. Rosas-Hernandez, L. E. Barraza-Lopez, S. Mendoza, B. Nakamura, H. |
| contents | Nonlinear optical materials of atomic thickness--such as non-centrosymmetric 2H transition metal dichalcogenide monolayers--have a second order nonlinear susceptibility ($χ^{(2)}$) whose intensity can be tuned by strain. However, whether $χ^{(2)}$ is enhanced or reduced by tensile strain is a subject of conflicting reports. Here, we grow high-quality MoSe$_2$ monolayers under controlled biaxial strain created by two different substrates, and study their linear and non-linear optical responses with a combination of experimental and theoretical approaches. A 15-fold overall enhancement in second harmonic generation (SHG) intensity is observed on MoSe$_2$ monolayers grown on SiO$_2$ when compared to its value when on a Si$_3$N$_4$ substrate. A seven-fold enhancement was ascertained to substrate interference, and a factor of two to the enhancement of $χ^{(2)}$ arising from biaxial strain: substrate interference and strain are independent handles to engineer the SHG strength of non-centrosymmetric 2D materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_01339 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Substrate interference and strain in the second harmonic generation from MoSe$_2$ monolayers Puri, S. Patel, S. Cabellos, J. L. Rosas-Hernandez, L. E. Barraza-Lopez, S. Mendoza, B. Nakamura, H. Materials Science Nonlinear optical materials of atomic thickness--such as non-centrosymmetric 2H transition metal dichalcogenide monolayers--have a second order nonlinear susceptibility ($χ^{(2)}$) whose intensity can be tuned by strain. However, whether $χ^{(2)}$ is enhanced or reduced by tensile strain is a subject of conflicting reports. Here, we grow high-quality MoSe$_2$ monolayers under controlled biaxial strain created by two different substrates, and study their linear and non-linear optical responses with a combination of experimental and theoretical approaches. A 15-fold overall enhancement in second harmonic generation (SHG) intensity is observed on MoSe$_2$ monolayers grown on SiO$_2$ when compared to its value when on a Si$_3$N$_4$ substrate. A seven-fold enhancement was ascertained to substrate interference, and a factor of two to the enhancement of $χ^{(2)}$ arising from biaxial strain: substrate interference and strain are independent handles to engineer the SHG strength of non-centrosymmetric 2D materials. |
| title | Substrate interference and strain in the second harmonic generation from MoSe$_2$ monolayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2407.01339 |