Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields
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arXiv
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| Format: | Preprint |
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2024
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| author | Yalcin, Eyüp Kalitukha, Ina V. Akimov, Ilya A. Korenev, Vladimir L. Ken, Olga S. Puebla, Jorge Otani, Yoshichika Hutchings, Oscar M. Gillard, Daniel J. Tartakovskii, Alexander I. Bayer, Manfred |
| author_facet | Yalcin, Eyüp Kalitukha, Ina V. Akimov, Ilya A. Korenev, Vladimir L. Ken, Olga S. Puebla, Jorge Otani, Yoshichika Hutchings, Oscar M. Gillard, Daniel J. Tartakovskii, Alexander I. Bayer, Manfred |
| contents | We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_01454 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields Yalcin, Eyüp Kalitukha, Ina V. Akimov, Ilya A. Korenev, Vladimir L. Ken, Olga S. Puebla, Jorge Otani, Yoshichika Hutchings, Oscar M. Gillard, Daniel J. Tartakovskii, Alexander I. Bayer, Manfred Mesoscale and Nanoscale Physics Materials Science We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer. |
| title | Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2407.01454 |