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| Main Authors: | , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2407.02767 |
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| _version_ | 1866912985732087808 |
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| author | Liu, Shang Liang, Yunfan Eldose, Nirosh M. Chen, Shunda Jin, Xiaochen Zhao, Haochen Shah, Manoj Bae, Jin-Hee Concepcion, Omar de Oliveira, Fernando M. Bikmukhametov, Ilias Wang, Xiaoxin Zeng, Yuping Buca, Dan Mortazavi, Mansour West, Damien Zhang, Shengbai Li, Tianshu Salamo, Gregory J. Yu, Shui-Qing Liu, Jifeng |
| author_facet | Liu, Shang Liang, Yunfan Eldose, Nirosh M. Chen, Shunda Jin, Xiaochen Zhao, Haochen Shah, Manoj Bae, Jin-Hee Concepcion, Omar de Oliveira, Fernando M. Bikmukhametov, Ilias Wang, Xiaoxin Zeng, Yuping Buca, Dan Mortazavi, Mansour West, Damien Zhang, Shengbai Li, Tianshu Salamo, Gregory J. Yu, Shui-Qing Liu, Jifeng |
| contents | Chemical short-range order (SRO) refers to preference or avoidance between neighboring atomic species, which significantly impacts the properties of advanced alloys. However, quantifying and further controlling SRO remains a major challenge, especially for semiconductor alloys. Inspired by theoretically predicted impact of SRO on the band structure of direct-bandgap GeSn for infrared photonics, we quantify and compare SRO in GeSn grown by molecular beam epitaxy (MBE) vs. chemical vapor deposition (CVD) using atom probe tomography. Remarkably, MBE-grown GeSn exhibits a stronger preference for Sn-Sn 1st nearest neighbors and an even smaller bandgap than CVD-grown samples with 2 at.% higher Sn composition. First-principles modeling confirms that the bandgap reduction originates from differences in SRO and further indicates that these SRO variations arise from different surface terminations and growth temperatures between MBE and CVD. These findings suggest that controlling SRO during GeSn growth offers a new degree of freedom for band engineering to achieve lattice-matched, high-quality Si-based electronic/photonic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_02767 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Atomic short-range order control of GeSn as a new degree of freedom for band engineering Liu, Shang Liang, Yunfan Eldose, Nirosh M. Chen, Shunda Jin, Xiaochen Zhao, Haochen Shah, Manoj Bae, Jin-Hee Concepcion, Omar de Oliveira, Fernando M. Bikmukhametov, Ilias Wang, Xiaoxin Zeng, Yuping Buca, Dan Mortazavi, Mansour West, Damien Zhang, Shengbai Li, Tianshu Salamo, Gregory J. Yu, Shui-Qing Liu, Jifeng Materials Science Mesoscale and Nanoscale Physics Chemical short-range order (SRO) refers to preference or avoidance between neighboring atomic species, which significantly impacts the properties of advanced alloys. However, quantifying and further controlling SRO remains a major challenge, especially for semiconductor alloys. Inspired by theoretically predicted impact of SRO on the band structure of direct-bandgap GeSn for infrared photonics, we quantify and compare SRO in GeSn grown by molecular beam epitaxy (MBE) vs. chemical vapor deposition (CVD) using atom probe tomography. Remarkably, MBE-grown GeSn exhibits a stronger preference for Sn-Sn 1st nearest neighbors and an even smaller bandgap than CVD-grown samples with 2 at.% higher Sn composition. First-principles modeling confirms that the bandgap reduction originates from differences in SRO and further indicates that these SRO variations arise from different surface terminations and growth temperatures between MBE and CVD. These findings suggest that controlling SRO during GeSn growth offers a new degree of freedom for band engineering to achieve lattice-matched, high-quality Si-based electronic/photonic devices. |
| title | Atomic short-range order control of GeSn as a new degree of freedom for band engineering |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2407.02767 |