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Autori principali: Butler-Caddle, Edward, Jayawardena, K. D. G. Imalka, Wijesekara, Anjana, Milot, Rebecca L, Lloyd-Hughes, James
Natura: Preprint
Pubblicazione: 2024
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Accesso online:https://arxiv.org/abs/2407.02809
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_version_ 1866929480720711680
author Butler-Caddle, Edward
Jayawardena, K. D. G. Imalka
Wijesekara, Anjana
Milot, Rebecca L
Lloyd-Hughes, James
author_facet Butler-Caddle, Edward
Jayawardena, K. D. G. Imalka
Wijesekara, Anjana
Milot, Rebecca L
Lloyd-Hughes, James
contents In perovskite solar cells, photovoltaic action is created by charge transport layers (CTLs) either side of the light-absorbing metal halide perovskite semiconductor. Hence, the rates for desirable charge extraction and unwanted interfacial recombination at the perovskite-CTL interfaces play a critical role for device efficiency. Here, the electrical properties of perovskite-CTL bilayer heterostructures are obtained using ultrafast THz and optical studies of the charge carrier dynamics after pulsed photoexcitation, combined with a physical model of charge carrier transport that includes the prominent Coulombic forces that arise after selective charge extraction into a CTL, and cross-interfacial recombination. The charge extraction velocity at the interface and the ambipolar diffusion coefficient within the perovskite are determined from the experimental decay profiles for heterostructures with three of the highest performing CTLs, namely C$_{60}$, PCBM and Spiro-OMeTAD. Definitive targets for the further improvement of devices are deduced: fullerenes deliver fast electron extraction, but suffer from a large rate constant for cross-interface recombination or hole extraction. Conversely, Spiro-OMeTAD exhibits slow hole extraction but does not increase the perovskite's surface recombination rate, likely contributing to its success in solar cell devices.
format Preprint
id arxiv_https___arxiv_org_abs_2407_02809
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Distinguishing Carrier Transport and Interfacial Recombination at Perovskite-Transport Layer Interfaces Using Ultrafast Spectroscopy and Numerical Simulation
Butler-Caddle, Edward
Jayawardena, K. D. G. Imalka
Wijesekara, Anjana
Milot, Rebecca L
Lloyd-Hughes, James
Materials Science
In perovskite solar cells, photovoltaic action is created by charge transport layers (CTLs) either side of the light-absorbing metal halide perovskite semiconductor. Hence, the rates for desirable charge extraction and unwanted interfacial recombination at the perovskite-CTL interfaces play a critical role for device efficiency. Here, the electrical properties of perovskite-CTL bilayer heterostructures are obtained using ultrafast THz and optical studies of the charge carrier dynamics after pulsed photoexcitation, combined with a physical model of charge carrier transport that includes the prominent Coulombic forces that arise after selective charge extraction into a CTL, and cross-interfacial recombination. The charge extraction velocity at the interface and the ambipolar diffusion coefficient within the perovskite are determined from the experimental decay profiles for heterostructures with three of the highest performing CTLs, namely C$_{60}$, PCBM and Spiro-OMeTAD. Definitive targets for the further improvement of devices are deduced: fullerenes deliver fast electron extraction, but suffer from a large rate constant for cross-interface recombination or hole extraction. Conversely, Spiro-OMeTAD exhibits slow hole extraction but does not increase the perovskite's surface recombination rate, likely contributing to its success in solar cell devices.
title Distinguishing Carrier Transport and Interfacial Recombination at Perovskite-Transport Layer Interfaces Using Ultrafast Spectroscopy and Numerical Simulation
topic Materials Science
url https://arxiv.org/abs/2407.02809