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Main Authors: Fèvre, Patrick Le, Salazar, Raphaël, Jamet, Matthieu, Bertran, François, Bigi, Chiara, Ourghi, Abdelkarim, Vergnaud, Céline, Pulkkinen, Aki, Minar, Jan, Jaouen, Thomas, Rault, Julien
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2407.03768
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author Fèvre, Patrick Le
Salazar, Raphaël
Jamet, Matthieu
Bertran, François
Bigi, Chiara
Ourghi, Abdelkarim
Vergnaud, Céline
Pulkkinen, Aki
Minar, Jan
Jaouen, Thomas
Rault, Julien
author_facet Fèvre, Patrick Le
Salazar, Raphaël
Jamet, Matthieu
Bertran, François
Bigi, Chiara
Ourghi, Abdelkarim
Vergnaud, Céline
Pulkkinen, Aki
Minar, Jan
Jaouen, Thomas
Rault, Julien
contents Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of epitaxial WSe$_2$ thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green's function calculation. This two-dimensional system is hence used as a benchmark to compare different theoretical approaches.
format Preprint
id arxiv_https___arxiv_org_abs_2407_03768
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Two-dimensional to bulk crossover of the WSe$_2$ electronic band structure
Fèvre, Patrick Le
Salazar, Raphaël
Jamet, Matthieu
Bertran, François
Bigi, Chiara
Ourghi, Abdelkarim
Vergnaud, Céline
Pulkkinen, Aki
Minar, Jan
Jaouen, Thomas
Rault, Julien
Materials Science
Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of epitaxial WSe$_2$ thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green's function calculation. This two-dimensional system is hence used as a benchmark to compare different theoretical approaches.
title Two-dimensional to bulk crossover of the WSe$_2$ electronic band structure
topic Materials Science
url https://arxiv.org/abs/2407.03768