Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures
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arXiv
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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866910524914008064 |
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| author | Sarkar, Soumya Han, Zirun Ghani, Maheera Abdul Strkalj, Nives Kim, Jung Ho Wang, Yan Jariwala, Deep Chhowalla, Manish |
| author_facet | Sarkar, Soumya Han, Zirun Ghani, Maheera Abdul Strkalj, Nives Kim, Jung Ho Wang, Yan Jariwala, Deep Chhowalla, Manish |
| contents | Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel non-volatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP2S6 (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10-nm-thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom electrodes, we achieve high electroresistance (on- and off-state resistance ratios) of ~10^6, on-state rectification ratios of ~2500 for read/write voltages of 2 V/0.5 V and maximum output current densities of 100 A/cm^2. These metrics compare favourably with state-of-the-art FeDs. Piezoresponse force microscopy measurements show that stabilization of intermediate net polarization states in CIPS leads to stable multi-bit data retention at room temperature. The combination of two-terminal design, multi-bit memory, and low-power operation in CIPS-based FeDs is potentially interesting for compute-in-memory and neuromorphic computing applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_09175 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures Sarkar, Soumya Han, Zirun Ghani, Maheera Abdul Strkalj, Nives Kim, Jung Ho Wang, Yan Jariwala, Deep Chhowalla, Manish Applied Physics Materials Science Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel non-volatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP2S6 (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10-nm-thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom electrodes, we achieve high electroresistance (on- and off-state resistance ratios) of ~10^6, on-state rectification ratios of ~2500 for read/write voltages of 2 V/0.5 V and maximum output current densities of 100 A/cm^2. These metrics compare favourably with state-of-the-art FeDs. Piezoresponse force microscopy measurements show that stabilization of intermediate net polarization states in CIPS leads to stable multi-bit data retention at room temperature. The combination of two-terminal design, multi-bit memory, and low-power operation in CIPS-based FeDs is potentially interesting for compute-in-memory and neuromorphic computing applications. |
| title | Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2407.09175 |