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Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Ghosh, Saptarsi, Frentrup, Martin, Hinz, Alexander M., Pomeroy, James W., Field, Daniel, Wallis, David J., Kuball, Martin, Oliver, Rachel A.
Format:	Preprint
Publié:	2024
Sujets:	Applied Physics Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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