Ferroelectric AlBN Films by Molecular Beam Epitaxy
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866911959024140288 |
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| author | Savant, Chandrashekhar Gund, Ved Nomoto, Kazuki Maeda, Takuya Jadhav, Shubham Lee, Joongwon Ramesh, Madhav Kim, Eungkyun Nguyen, Thai-Son Chen, Yu-Hsin Casamento, Joseph Rana, Farhan Lal, Amit Huili Jena, Debdeep |
| author_facet | Savant, Chandrashekhar Gund, Ved Nomoto, Kazuki Maeda, Takuya Jadhav, Shubham Lee, Joongwon Ramesh, Madhav Kim, Eungkyun Nguyen, Thai-Son Chen, Yu-Hsin Casamento, Joseph Rana, Farhan Lal, Amit Huili Jena, Debdeep |
| contents | We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_09740 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ferroelectric AlBN Films by Molecular Beam Epitaxy Savant, Chandrashekhar Gund, Ved Nomoto, Kazuki Maeda, Takuya Jadhav, Shubham Lee, Joongwon Ramesh, Madhav Kim, Eungkyun Nguyen, Thai-Son Chen, Yu-Hsin Casamento, Joseph Rana, Farhan Lal, Amit Huili Jena, Debdeep Materials Science Mesoscale and Nanoscale Physics Superconductivity We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices. |
| title | Ferroelectric AlBN Films by Molecular Beam Epitaxy |
| topic | Materials Science Mesoscale and Nanoscale Physics Superconductivity |
| url | https://arxiv.org/abs/2407.09740 |