Cita APA (7a ed.)

Xi, Y., Li, H. Y., Li, G., Su, Q., Mao, K., Xu, B., . . . Cui, Y. (2024). Tailoring 4H-SiC Surface Electronic States by Atomic-Layer Deposition for Ideal Peta-Ohm Resistors.

Cita Chicago Style (17a ed.)

Xi, Yuying, Helios Y. Li, Guohui Li, Qingmei Su, Kaili Mao, Bingshe Xu, Yuying Hao, Nicholas X. Fang, y Yanxia Cui. Tailoring 4H-SiC Surface Electronic States by Atomic-Layer Deposition for Ideal Peta-Ohm Resistors. 2024.

Cita MLA (9a ed.)

Xi, Yuying, et al. Tailoring 4H-SiC Surface Electronic States by Atomic-Layer Deposition for Ideal Peta-Ohm Resistors. 2024.