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Tailoring 4H-SiC Surface Electronic States by Atomic-Layer Deposition for Ideal Peta-Ohm Resistors

Fuente: arXiv

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Bibliographic Details
Main Authors:	Xi, Yuying, Li, Helios Y., Li, Guohui, Su, Qingmei, Mao, Kaili, Xu, Bingshe, Hao, Yuying, Fang, Nicholas X., Cui, Yanxia
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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