Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor

Fuente: arXiv

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Bibliographic Details
Main Authors:	Mukhopadhyay, Swarnav, Seshadri, Parthasarathy, Haque, Mobinul, Xie, Shuwen, Bai, Ruixin, Sanyal, Surjava, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra S.
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2407.10342