Room temperature operation of germanium-silicon single-photon avalanche diode
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866929502111662080 |
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| author | Na, Neil Lu, Yen-Cheng Liu, Yu-Hsuan Chen, Po-Wei Lai, Ying-Chen Lin, You-Ru Lin, Chung-Chih Shia, Tim Cheng, Chih-Hao Chen, Shu-Lu |
| author_facet | Na, Neil Lu, Yen-Cheng Liu, Yu-Hsuan Chen, Po-Wei Lai, Ying-Chen Lin, You-Ru Lin, Chung-Chih Shia, Tim Cheng, Chih-Hao Chen, Shu-Lu |
| contents | The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at cryogenic temperature and (2) the incompatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes - so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD) has gained mainstream success and has been used in consumer electronics. With the growing demand to shift the operation wavelength from near-infrared to short-wavelength infrared (SWIR) for better safety and performance, an alternative solution is required because Si has negligible optical absorption for wavelengths beyond 1 μm. Here we report a CMOS-compatible, high-performing germanium-silicon SPAD operated at room temperature, featuring a noise-equivalent power improvement over the previous Ge-based SPADs by 2-3.5 orders of magnitude. Key parameters such as dark count rate, single-photon detection probability at 1,310 nm, timing jitter, after-pulsing characteristic time and after-pulsing probability are, respectively, measured as 19 kHz μm^2, 12%, 188 ps, ~90 ns and <1%, with a low breakdown voltage of 10.26 V and a small excess bias of 0.75 V. Three-dimensional point-cloud images are captured with direct time-of-flight technique as proof of concept. This work paves the way towards using single-photon-sensitive SWIR sensors, imagers and photonic integrated circuits in everyday life. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_10379 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Room temperature operation of germanium-silicon single-photon avalanche diode Na, Neil Lu, Yen-Cheng Liu, Yu-Hsuan Chen, Po-Wei Lai, Ying-Chen Lin, You-Ru Lin, Chung-Chih Shia, Tim Cheng, Chih-Hao Chen, Shu-Lu Instrumentation and Detectors Optics The ability to detect single photons has led to the advancement of numerous research fields. Although various types of single-photon detector have been developed, because of two main factors - that is, (1) the need for operating at cryogenic temperature and (2) the incompatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes - so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD) has gained mainstream success and has been used in consumer electronics. With the growing demand to shift the operation wavelength from near-infrared to short-wavelength infrared (SWIR) for better safety and performance, an alternative solution is required because Si has negligible optical absorption for wavelengths beyond 1 μm. Here we report a CMOS-compatible, high-performing germanium-silicon SPAD operated at room temperature, featuring a noise-equivalent power improvement over the previous Ge-based SPADs by 2-3.5 orders of magnitude. Key parameters such as dark count rate, single-photon detection probability at 1,310 nm, timing jitter, after-pulsing characteristic time and after-pulsing probability are, respectively, measured as 19 kHz μm^2, 12%, 188 ps, ~90 ns and <1%, with a low breakdown voltage of 10.26 V and a small excess bias of 0.75 V. Three-dimensional point-cloud images are captured with direct time-of-flight technique as proof of concept. This work paves the way towards using single-photon-sensitive SWIR sensors, imagers and photonic integrated circuits in everyday life. |
| title | Room temperature operation of germanium-silicon single-photon avalanche diode |
| topic | Instrumentation and Detectors Optics |
| url | https://arxiv.org/abs/2407.10379 |