Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride
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| Format: | Preprint |
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2024
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| _version_ | 1866914871991336960 |
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| author | Sinha, Priyanka Panigrahi, Prasanta K. Chittari, Bheemalingam |
| author_facet | Sinha, Priyanka Panigrahi, Prasanta K. Chittari, Bheemalingam |
| contents | In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications. We systematically investigate the electronic and optical properties of graphene/hBN under the application of strain, considering various stacking geometries within the framework of density-functional theory. The semimetallic graphene layer upon aligning on the insulating hexagonal boron nitride sheet opens a few tens of meV band gap at the Dirac point due to the induced on-site energy differences on the two sublattices of graphene. Here, we demonstrate that by simultaneously tuning the interlayer distance and lattice constant, this band gap can be significantly increased to 1 eV. Interestingly, in both scenarios (small and large band gaps), the material undergoes a transition from a semiconductor to a semimetallic state. Importantly, the tunability of this band gap is strongly influenced by the specific stacking configuration. We further explored the optical properties across a broad spectrum, revealing that the presence of a strain-induced band gap fundamentally alters how light interacts with the system. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2407_11140 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride Sinha, Priyanka Panigrahi, Prasanta K. Chittari, Bheemalingam Mesoscale and Nanoscale Physics In this study, we highlight the potential of strain engineering in graphene/hBN (hexagonal Boron nitride) 2D heterostructures, enabling their use as wide-range light absorbers with significant implications for optoelectronic applications. We systematically investigate the electronic and optical properties of graphene/hBN under the application of strain, considering various stacking geometries within the framework of density-functional theory. The semimetallic graphene layer upon aligning on the insulating hexagonal boron nitride sheet opens a few tens of meV band gap at the Dirac point due to the induced on-site energy differences on the two sublattices of graphene. Here, we demonstrate that by simultaneously tuning the interlayer distance and lattice constant, this band gap can be significantly increased to 1 eV. Interestingly, in both scenarios (small and large band gaps), the material undergoes a transition from a semiconductor to a semimetallic state. Importantly, the tunability of this band gap is strongly influenced by the specific stacking configuration. We further explored the optical properties across a broad spectrum, revealing that the presence of a strain-induced band gap fundamentally alters how light interacts with the system. |
| title | Strain induced tunable band gap and optical properties of graphene on hexagonal boron nitride |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2407.11140 |