Superconducting surface trap chips for microwave-driven trapped ions

Fuente: arXiv
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Autores principales: Tsuchimoto, Yuta, Nakamura, Ippei, Shirai, Shotaro, Noguchi, Atsushi
Formato: Preprint
Publicado: 2024
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_version_ 1866908084011532288
author Tsuchimoto, Yuta
Nakamura, Ippei
Shirai, Shotaro
Noguchi, Atsushi
author_facet Tsuchimoto, Yuta
Nakamura, Ippei
Shirai, Shotaro
Noguchi, Atsushi
contents Microwave-driven trapped ion logic gates offer a promising avenue for advancing beyond laser-based logic operations. In future microwave-based operations, however, the joule heat produced by large microwave currents flowing through narrow microwave electrodes would potentially hinder improvements in gate speed and fidelity. Moreover, scalability, particularly in cryogenic trapped ion systems, is impeded by the excessive joule heat. To address these challenges, we present a novel approach: superconducting surface trap chips that integrate high-$Q$ microwave resonators with large current capacities. Utilizing sub-ampere microwave currents in superconducting Nb resonators, we generate substantial magnetic field gradients with significantly reduced losses compared to conventional metal chips. By harnessing the high $Q$ factors of superconducting resonators, we propose a power-efficient two-qubit gate scheme capable of achieving a sub-milliwatt external microwave input power at a gate Rabi frequency of 1 kHz.
format Preprint
id arxiv_https___arxiv_org_abs_2407_11443
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Superconducting surface trap chips for microwave-driven trapped ions
Tsuchimoto, Yuta
Nakamura, Ippei
Shirai, Shotaro
Noguchi, Atsushi
Quantum Physics
Microwave-driven trapped ion logic gates offer a promising avenue for advancing beyond laser-based logic operations. In future microwave-based operations, however, the joule heat produced by large microwave currents flowing through narrow microwave electrodes would potentially hinder improvements in gate speed and fidelity. Moreover, scalability, particularly in cryogenic trapped ion systems, is impeded by the excessive joule heat. To address these challenges, we present a novel approach: superconducting surface trap chips that integrate high-$Q$ microwave resonators with large current capacities. Utilizing sub-ampere microwave currents in superconducting Nb resonators, we generate substantial magnetic field gradients with significantly reduced losses compared to conventional metal chips. By harnessing the high $Q$ factors of superconducting resonators, we propose a power-efficient two-qubit gate scheme capable of achieving a sub-milliwatt external microwave input power at a gate Rabi frequency of 1 kHz.
title Superconducting surface trap chips for microwave-driven trapped ions
topic Quantum Physics
url https://arxiv.org/abs/2407.11443