Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission

Fuente: arXiv
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Autori principali: Bergmann, Annika, Deb, Swarup, Zollner, Klaus, Schneidt, Veronika, Hemaid, Mustafa, Watanabe, Kenji, Taniguchi, Takashi, Schwartz, Rico, Fabian, Jaroslav, Korn, Tobias
Natura: Preprint
Pubblicazione: 2024
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author Bergmann, Annika
Deb, Swarup
Zollner, Klaus
Schneidt, Veronika
Hemaid, Mustafa
Watanabe, Kenji
Taniguchi, Takashi
Schwartz, Rico
Fabian, Jaroslav
Korn, Tobias
author_facet Bergmann, Annika
Deb, Swarup
Zollner, Klaus
Schneidt, Veronika
Hemaid, Mustafa
Watanabe, Kenji
Taniguchi, Takashi
Schwartz, Rico
Fabian, Jaroslav
Korn, Tobias
contents We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination.
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id arxiv_https___arxiv_org_abs_2407_11603
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission
Bergmann, Annika
Deb, Swarup
Zollner, Klaus
Schneidt, Veronika
Hemaid, Mustafa
Watanabe, Kenji
Taniguchi, Takashi
Schwartz, Rico
Fabian, Jaroslav
Korn, Tobias
Mesoscale and Nanoscale Physics
Materials Science
We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination.
title Effect of spin-dependent tunneling in a MoSe$_2$/Cr$_2$Ge$_2$Te$_6$ van der Waals heterostructure on exciton and trion emission
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2407.11603