Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917770104406016 |
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| author | Nakazawa, Yusuke Akiho, Takafumi Kanisawa, Kiyoshi Irie, Hiroshi Kumada, Norio Muraki, Koji |
| author_facet | Nakazawa, Yusuke Akiho, Takafumi Kanisawa, Kiyoshi Irie, Hiroshi Kumada, Norio Muraki, Koji |
| contents | We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the implementation of a GaAs buffer layer improves the crystal and interface quality compared to the control sample grown directly on an InP substrate. Both samples exhibit the quantum anomalous Hall effect (QAHE), but with similar thermal stability despite the different structural properties. Notably, the QAHE in the sample grown on a GaAs buffer layer displays a significantly larger (almost double) coercive field with a much smaller resistivity peak at the magnetization reversal. Possible effects of the interface quality on the magnetic properties of VBST and the QAHE are discussed. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2407_12268 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 Nakazawa, Yusuke Akiho, Takafumi Kanisawa, Kiyoshi Irie, Hiroshi Kumada, Norio Muraki, Koji Materials Science Mesoscale and Nanoscale Physics We report the growth, structural characterization, and transport properties of the quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 (VBST) grown on a GaAs buffer layer by molecular beam epitaxy on a GaAs(111)A substrate. X-ray diffraction and transmission electron microscopy show that the implementation of a GaAs buffer layer improves the crystal and interface quality compared to the control sample grown directly on an InP substrate. Both samples exhibit the quantum anomalous Hall effect (QAHE), but with similar thermal stability despite the different structural properties. Notably, the QAHE in the sample grown on a GaAs buffer layer displays a significantly larger (almost double) coercive field with a much smaller resistivity peak at the magnetization reversal. Possible effects of the interface quality on the magnetic properties of VBST and the QAHE are discussed. |
| title | Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1-x)2-yTe3 |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2407.12268 |