Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si

Fuente: arXiv

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Bibliographic Details
Main Authors:	De, Binoy Krishna, Sathe, V. G., Divya, Sharma, Pragati, Parate, Shubham Kumar, Kunwar, Hemant Singh, Nukala, Pavan, Roy, S. B.
Format:	Preprint
Published:	2024
Subjects:	Materials Science Strongly Correlated Electrons
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2407.12507