The role of precursor coverage in the synthesis and substrate transfer of graphene nanoribbons

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Darawish, Rimah, Braun, Oliver, Muellen, Klaus, Calame, Michel, Ruffieux, Pascal, Fasel, Roman, Barin, Gabriela Borin
Formato: Preprint
Publicado: 2024
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866909525097840640
author Darawish, Rimah
Braun, Oliver
Muellen, Klaus
Calame, Michel
Ruffieux, Pascal
Fasel, Roman
Barin, Gabriela Borin
author_facet Darawish, Rimah
Braun, Oliver
Muellen, Klaus
Calame, Michel
Ruffieux, Pascal
Fasel, Roman
Barin, Gabriela Borin
contents Graphene nanoribbons (GNRs) with atomically precise widths and edge topologies have well-defined band gaps that depend on ribbon dimensions, making them ideal for room-temperature switching applications like field-effect transistors (FETs). For efficient device integration, it is crucial to optimize growth conditions to maximize GNR length and, consequently, device yield. Here, we investigate the growth and alignment of 9-atom-wide armchair graphene nanoribbons (9-AGNRs) on a vicinal gold substrate, Au(788), with varying molecular precursor doses (PD) and, therefore, different resulting GNR coverages. Our investigation reveals that GNR growth location on the Au(788) substrate is coverage-dependent. Furthermore, scanning tunneling microscopy shows a strong correlation between the GNR length evolution and both the PD and the GNR growth location on the substrate. Employing Raman spectroscopy, we analyze samples with eight different PDs on Au(788). We find that GNR alignment improves with length, achieving near-perfect alignment with an average GNR length of ~40 nm for GNRs growing solely at Au(788) step edges. To fully exploit GNR properties in device architectures, GNRs need to be transferred from the gold to semiconducting or insulating substrates. Upon substrate transfer, samples with higher PD present systematically better alignment preservation and less surface disorder, which we attribute to reduced GNR mobility during the transfer process. PD also affects the substrate transfer success rate, with higher success rates observed for samples with higher GNR coverages (77%) compared to those with lower GNR coverages (53%). Our findings characterize the important relationship between precursor dose, GNR length, alignment quality, and surface disorder during GNR growth and upon substrate transfer, offering crucial insights for the further development of GNR-based nanoelectronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2407_12646
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle The role of precursor coverage in the synthesis and substrate transfer of graphene nanoribbons
Darawish, Rimah
Braun, Oliver
Muellen, Klaus
Calame, Michel
Ruffieux, Pascal
Fasel, Roman
Barin, Gabriela Borin
Materials Science
Graphene nanoribbons (GNRs) with atomically precise widths and edge topologies have well-defined band gaps that depend on ribbon dimensions, making them ideal for room-temperature switching applications like field-effect transistors (FETs). For efficient device integration, it is crucial to optimize growth conditions to maximize GNR length and, consequently, device yield. Here, we investigate the growth and alignment of 9-atom-wide armchair graphene nanoribbons (9-AGNRs) on a vicinal gold substrate, Au(788), with varying molecular precursor doses (PD) and, therefore, different resulting GNR coverages. Our investigation reveals that GNR growth location on the Au(788) substrate is coverage-dependent. Furthermore, scanning tunneling microscopy shows a strong correlation between the GNR length evolution and both the PD and the GNR growth location on the substrate. Employing Raman spectroscopy, we analyze samples with eight different PDs on Au(788). We find that GNR alignment improves with length, achieving near-perfect alignment with an average GNR length of ~40 nm for GNRs growing solely at Au(788) step edges. To fully exploit GNR properties in device architectures, GNRs need to be transferred from the gold to semiconducting or insulating substrates. Upon substrate transfer, samples with higher PD present systematically better alignment preservation and less surface disorder, which we attribute to reduced GNR mobility during the transfer process. PD also affects the substrate transfer success rate, with higher success rates observed for samples with higher GNR coverages (77%) compared to those with lower GNR coverages (53%). Our findings characterize the important relationship between precursor dose, GNR length, alignment quality, and surface disorder during GNR growth and upon substrate transfer, offering crucial insights for the further development of GNR-based nanoelectronic devices.
title The role of precursor coverage in the synthesis and substrate transfer of graphene nanoribbons
topic Materials Science
url https://arxiv.org/abs/2407.12646