Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Fiorenza, Patrick, Zignale, Marco, Zanetti, Edoardo., Alessandrino, Mario S., Carbone, Beatrice, Guarnera, Alfio, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Internet

https://arxiv.org/abs/2407.13370