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Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Fiorenza, Patrick, Zignale, Marco, Zanetti, Edoardo., Alessandrino, Mario S., Carbone, Beatrice, Guarnera, Alfio, Saggio, Mario, Giannazzo, Filippo, Roccaforte, Fabrizio
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Applied Physics Materials Science
Accesso online:	Acceder al recurso
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