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Autores principales: George, Alphy, Sreepriya, T., Panda, Arun Kumar, Mythili, R., Dasgupta, Arup, Divakar, R.
Formato: Preprint
Publicado: 2024
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Acceso en línea:https://arxiv.org/abs/2407.14183
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_version_ 1866911961937084416
author George, Alphy
Sreepriya, T.
Panda, Arun Kumar
Mythili, R.
Dasgupta, Arup
Divakar, R.
author_facet George, Alphy
Sreepriya, T.
Panda, Arun Kumar
Mythili, R.
Dasgupta, Arup
Divakar, R.
contents Atomistic origin of stacking faults in non-close packed systems is a fundamentally distinct mechanism from the well-known close packed structures with ABC stacking, and represents an uncharted territory in material research. According to experimental data, stacking faults in simple hexagonal WC happen in {1-100} planes that are packed rectangularly and have ABAB stacking. This work identified the type of the defect and crystallographic behaviour by creating energetically relaxed potential atomistic models of stacking faults in WC. Experimental evidence supporting the rotation axis along stacking fault caused by variation in carbon ordering at the interstitial site has been established, in accordance with the theoretical model.
format Preprint
id arxiv_https___arxiv_org_abs_2407_14183
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Stacking Fault in Non-Close Packed System- Role of Interstitials at Pentahedron Voids in WC Simple Hexagonal
George, Alphy
Sreepriya, T.
Panda, Arun Kumar
Mythili, R.
Dasgupta, Arup
Divakar, R.
Materials Science
Atomistic origin of stacking faults in non-close packed systems is a fundamentally distinct mechanism from the well-known close packed structures with ABC stacking, and represents an uncharted territory in material research. According to experimental data, stacking faults in simple hexagonal WC happen in {1-100} planes that are packed rectangularly and have ABAB stacking. This work identified the type of the defect and crystallographic behaviour by creating energetically relaxed potential atomistic models of stacking faults in WC. Experimental evidence supporting the rotation axis along stacking fault caused by variation in carbon ordering at the interstitial site has been established, in accordance with the theoretical model.
title Stacking Fault in Non-Close Packed System- Role of Interstitials at Pentahedron Voids in WC Simple Hexagonal
topic Materials Science
url https://arxiv.org/abs/2407.14183