Sliding-Reversible Bandgap Modulation in Irreversible Asymmetric Multilayers
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arXiv
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| Autores principales: | , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866914920376827904 |
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| author | Ke, Changming Yang, Yudi Qian, Zhuang Liu, Shi |
| author_facet | Ke, Changming Yang, Yudi Qian, Zhuang Liu, Shi |
| contents | The electronic bandgap of a material is often fixed after fabrication. The capability to realize on-demand and non-volatile control over the bandgap will unlock exciting opportunities for adaptive devices with enhanced functionalities and efficiency. We introduce a general design principle for on-demand and non-volatile control of bandgap values, which utilizes reversible sliding-induced polarization driven by an external electric field to modulate the irreversible background polarization in asymmetric two-dimensional (2D) multilayers. The structural asymmetry can be conveniently achieved in homobilayers of Janus monolayers and heterobilayers of nonpolar monolayers, making the design principle applicable to a broad range of 2D materials. We demonstrate the versatility of this design principle using experimentally synthesized Janus metal dichalcogenide (TMD) multilayers as examples. Our first-principles calculations show that the bandgap modulation can reach up to 0.3 eV and even support a semimetal-to-semiconductor transition. By integrating a ferroelectric monolayer represented by 1T$'''$-MoS$_2$ into a bilayer, we show that the combination of intrinsic ferroelectricity and sliding ferroelectricity leads to multi-bandgap systems coupled to multi-step polarization switching. The sliding-reversible bandgap modulation offers an avenue to dynamically adjust the optical, thermal, and electronic properties of 2D materials through mechanical and electrical stimuli. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_14244 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Sliding-Reversible Bandgap Modulation in Irreversible Asymmetric Multilayers Ke, Changming Yang, Yudi Qian, Zhuang Liu, Shi Materials Science The electronic bandgap of a material is often fixed after fabrication. The capability to realize on-demand and non-volatile control over the bandgap will unlock exciting opportunities for adaptive devices with enhanced functionalities and efficiency. We introduce a general design principle for on-demand and non-volatile control of bandgap values, which utilizes reversible sliding-induced polarization driven by an external electric field to modulate the irreversible background polarization in asymmetric two-dimensional (2D) multilayers. The structural asymmetry can be conveniently achieved in homobilayers of Janus monolayers and heterobilayers of nonpolar monolayers, making the design principle applicable to a broad range of 2D materials. We demonstrate the versatility of this design principle using experimentally synthesized Janus metal dichalcogenide (TMD) multilayers as examples. Our first-principles calculations show that the bandgap modulation can reach up to 0.3 eV and even support a semimetal-to-semiconductor transition. By integrating a ferroelectric monolayer represented by 1T$'''$-MoS$_2$ into a bilayer, we show that the combination of intrinsic ferroelectricity and sliding ferroelectricity leads to multi-bandgap systems coupled to multi-step polarization switching. The sliding-reversible bandgap modulation offers an avenue to dynamically adjust the optical, thermal, and electronic properties of 2D materials through mechanical and electrical stimuli. |
| title | Sliding-Reversible Bandgap Modulation in Irreversible Asymmetric Multilayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2407.14244 |