Correlated Topological Mixed-Valence Insulators in Moiré Hetero-Bilayers
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arXiv
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| Autori principali: | , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866915028451459072 |
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| author | Mendez-Valderrama, Juan Felipe Kim, Sunghoon Chowdhury, Debanjan |
| author_facet | Mendez-Valderrama, Juan Felipe Kim, Sunghoon Chowdhury, Debanjan |
| contents | Moiré transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of interaction-induced electronic phases that arise at a total commensurate filling of $ν_T=2$ in moiré TMD heterobilayers, focusing specifically on their renormalized band-topology. We carry out a comprehensive self-consistent parton mean-field analysis on an interacting mixed-valence Hamiltonian describing AB-stacked MoTe$_2$/WSe$_2$ to highlight different ingredients that arise due to "Mottness", band-flattening, an enhanced excitonic tendency, and band-inversion, leading to correlated topological semi-metals and insulators. We also propose a possible route towards realizing fractionalized insulators with emergent neutral fermionic excitations in this and other closely related platforms. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_14583 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Correlated Topological Mixed-Valence Insulators in Moiré Hetero-Bilayers Mendez-Valderrama, Juan Felipe Kim, Sunghoon Chowdhury, Debanjan Strongly Correlated Electrons Moiré transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of interaction-induced electronic phases that arise at a total commensurate filling of $ν_T=2$ in moiré TMD heterobilayers, focusing specifically on their renormalized band-topology. We carry out a comprehensive self-consistent parton mean-field analysis on an interacting mixed-valence Hamiltonian describing AB-stacked MoTe$_2$/WSe$_2$ to highlight different ingredients that arise due to "Mottness", band-flattening, an enhanced excitonic tendency, and band-inversion, leading to correlated topological semi-metals and insulators. We also propose a possible route towards realizing fractionalized insulators with emergent neutral fermionic excitations in this and other closely related platforms. |
| title | Correlated Topological Mixed-Valence Insulators in Moiré Hetero-Bilayers |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2407.14583 |