Accurate estimation of interfacial thermal conductance between silicon and diamond enabled by a machine learning interatomic potential

Fuente: arXiv
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Auteurs principaux: Rajabpour, Ali, Mortazavi, Bohayra, Mirchi, Pedram, Hajj, Julien El, Guo, Yangyu, Zhuang, Xiaoying, Merabia, Samy
Format: Preprint
Publié: 2024
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author Rajabpour, Ali
Mortazavi, Bohayra
Mirchi, Pedram
Hajj, Julien El
Guo, Yangyu
Zhuang, Xiaoying
Merabia, Samy
author_facet Rajabpour, Ali
Mortazavi, Bohayra
Mirchi, Pedram
Hajj, Julien El
Guo, Yangyu
Zhuang, Xiaoying
Merabia, Samy
contents Thermal management at silicon-diamond interface is critical for advancing high-performance electronic and optoelectronic devices. In this study, we calculate the interfacial thermal conductance between silicon and diamond using machine learning (ML) interatomic potentials trained on density functional theory (DFT) data. Using non-equilibrium molecular dynamics (NEMD) simulations, we compute the interfacial thermal conductance (ITC) for various system sizes. Our results show a closer agreement with experimental data than those obtained using traditional semi-empirical potentials such as Tersoff and Brenner which overestimate ITC by a factor of about 3. In addition, we analyze the frequency-dependent heat transfer spectrum, providing insights into the contributions of different phonon modes to the interfacial thermal conductance. The ML potential accurately captures the phonon dispersion relations and lifetimes, in good agreement with DFT calculations and experimental observations. It is shown that the Tersoff potential predicts higher phonon group velocities and phonon lifetimes compared to the DFT results. Furthermore, it predicts higher interfacial bonding strength, which is consistent with higher interfacial thermal conductance as compared to the ML potential. This study highlights the use of the ML interatomic potential to improve the accuracy and computational efficiency of thermal transport simulations in complex material systems.
format Preprint
id arxiv_https___arxiv_org_abs_2407_15404
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Accurate estimation of interfacial thermal conductance between silicon and diamond enabled by a machine learning interatomic potential
Rajabpour, Ali
Mortazavi, Bohayra
Mirchi, Pedram
Hajj, Julien El
Guo, Yangyu
Zhuang, Xiaoying
Merabia, Samy
Materials Science
Mesoscale and Nanoscale Physics
Thermal management at silicon-diamond interface is critical for advancing high-performance electronic and optoelectronic devices. In this study, we calculate the interfacial thermal conductance between silicon and diamond using machine learning (ML) interatomic potentials trained on density functional theory (DFT) data. Using non-equilibrium molecular dynamics (NEMD) simulations, we compute the interfacial thermal conductance (ITC) for various system sizes. Our results show a closer agreement with experimental data than those obtained using traditional semi-empirical potentials such as Tersoff and Brenner which overestimate ITC by a factor of about 3. In addition, we analyze the frequency-dependent heat transfer spectrum, providing insights into the contributions of different phonon modes to the interfacial thermal conductance. The ML potential accurately captures the phonon dispersion relations and lifetimes, in good agreement with DFT calculations and experimental observations. It is shown that the Tersoff potential predicts higher phonon group velocities and phonon lifetimes compared to the DFT results. Furthermore, it predicts higher interfacial bonding strength, which is consistent with higher interfacial thermal conductance as compared to the ML potential. This study highlights the use of the ML interatomic potential to improve the accuracy and computational efficiency of thermal transport simulations in complex material systems.
title Accurate estimation of interfacial thermal conductance between silicon and diamond enabled by a machine learning interatomic potential
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2407.15404