A backgate for enhanced tunability of holes in planar germanium
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2024
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866914508193136640 |
|---|---|
| author | Ruggiero, Luigi Nigro, Arianna Zardo, Ilaria Hofmann, Andrea |
| author_facet | Ruggiero, Luigi Nigro, Arianna Zardo, Ilaria Hofmann, Andrea |
| contents | Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with emphasis on their strong and tunable spin-orbit interaction, low effective mass, and high hole mobility. However, planar systems are still limited by the fact that the shape of the confinement potential is directly related to the density. In this work, we present the successful implementation of a backgate for a planar germanium heterostructure. The backgate, in combination with a topgate, enables independent control over the density and the electric field, which determines important state properties such as the effective mass, the $g$-factor and the quantum lifetime. This unparalleled degree of control paves the way towards engineering qubit properties and facilitates the targetted tuning of bilayer quantum wells, which promise denser qubit packing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_15725 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | A backgate for enhanced tunability of holes in planar germanium Ruggiero, Luigi Nigro, Arianna Zardo, Ilaria Hofmann, Andrea Mesoscale and Nanoscale Physics Materials Science Quantum Physics Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with emphasis on their strong and tunable spin-orbit interaction, low effective mass, and high hole mobility. However, planar systems are still limited by the fact that the shape of the confinement potential is directly related to the density. In this work, we present the successful implementation of a backgate for a planar germanium heterostructure. The backgate, in combination with a topgate, enables independent control over the density and the electric field, which determines important state properties such as the effective mass, the $g$-factor and the quantum lifetime. This unparalleled degree of control paves the way towards engineering qubit properties and facilitates the targetted tuning of bilayer quantum wells, which promise denser qubit packing. |
| title | A backgate for enhanced tunability of holes in planar germanium |
| topic | Mesoscale and Nanoscale Physics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2407.15725 |