Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer
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| Format: | Preprint |
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2024
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| _version_ | 1866909266815746048 |
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| author | Liang, Dun-Cheng Guo, San-Dong Chen, Shaobo |
| author_facet | Liang, Dun-Cheng Guo, San-Dong Chen, Shaobo |
| contents | The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley Hall effect (AVHE). Here, we propose to implement AVHE in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer with excellent stability, where the spontaneous spin-splitting can be induced due to layer-dependent electrostatic potential caused by out-of-plane built-in electric field. From a symmetry perspective, the introduction of Janus structure breaks the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$), which gives rise to spin-splitting. Both unstarined and strained monolayer $\mathrm{Cr_2CHCl}$ possess valley splitting of larger than 51 meV, which is higher than the thermal energy of room temperature (25 meV). The layer-locked Berry curvature gives rise to layer-locked AVHE. Our work reveals a route to achieve AVHE in AFM monolayer with spontaneous spin-splitting. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_16954 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer Liang, Dun-Cheng Guo, San-Dong Chen, Shaobo Materials Science The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley Hall effect (AVHE). Here, we propose to implement AVHE in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer with excellent stability, where the spontaneous spin-splitting can be induced due to layer-dependent electrostatic potential caused by out-of-plane built-in electric field. From a symmetry perspective, the introduction of Janus structure breaks the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$), which gives rise to spin-splitting. Both unstarined and strained monolayer $\mathrm{Cr_2CHCl}$ possess valley splitting of larger than 51 meV, which is higher than the thermal energy of room temperature (25 meV). The layer-locked Berry curvature gives rise to layer-locked AVHE. Our work reveals a route to achieve AVHE in AFM monolayer with spontaneous spin-splitting. |
| title | Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer |
| topic | Materials Science |
| url | https://arxiv.org/abs/2407.16954 |