APA (7th ed.) Citation

Peterson, C., Bhattacharyya, A., Chanchaiworawit, K., Kahler, R., Roy, S., Liu, Y., . . . Krishnamoorthy, S. (2024). Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers.

Chicago Style (17th ed.) Citation

Peterson, Carl, et al. Record-High Electron Mobility and Controlled Low 10$^{15}$ Cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers. 2024.

MLA (9th ed.) Citation

Peterson, Carl, et al. Record-High Electron Mobility and Controlled Low 10$^{15}$ Cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers. 2024.