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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2407.17089 |
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| _version_ | 1866915016443166720 |
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| author | Peterson, Carl Bhattacharyya, Arkka Chanchaiworawit, Kittamet Kahler, Rachel Roy, Saurav Liu, Yizheng Rebollo, Steve Kallistova, Anna Mates, Thomas E. Krishnamoorthy, Sriram |
| author_facet | Peterson, Carl Bhattacharyya, Arkka Chanchaiworawit, Kittamet Kahler, Rachel Roy, Saurav Liu, Yizheng Rebollo, Steve Kallistova, Anna Mates, Thomas E. Krishnamoorthy, Sriram |
| contents | We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$m thick $β$-Ga$_2$O$_3$ films with electron concentrations in the 10$^{15}$ cm$^{-3}$ range and record-high room temperature Hall electron mobilities of up to 200 cm$^2$/V.s, reaching the predicted theoretical maximum room temperature mobility value for $β$-Ga$_2$O$_3$. Growth of the homoepitaxial films was performed on Fe-doped (010) $β$-Ga$_2$O$_3$ substrates at a growth rate of 1.9 $μ$m/hr using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 x 10$^{15}$ cm$^{-3}$ and Hall mobility of 196 cm$^2$/V.s. Growth of intentionally Si-Doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 x 10$^{15}$ cm$^{-3}$ to 8.30 x 10$^{15}$ cm$^{-3}$ and exceptional Hall mobilities ranging from 194 - 200 cm$^2$/V.s demonstrated. C-V measurements showed a flat charge profile with the N$_D^+$ - N$_A^-$ values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with Carbon and Hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 $μ$m thick $β$-Ga$_2$O$_3$ films and controllable doping into the mid 10$^{15}$ cm$^{-3}$ range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick $β$-Ga$_2$O$_3$ drift layers for next generation vertical $β$-Ga$_2$O$_3$ power devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_17089 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers Peterson, Carl Bhattacharyya, Arkka Chanchaiworawit, Kittamet Kahler, Rachel Roy, Saurav Liu, Yizheng Rebollo, Steve Kallistova, Anna Mates, Thomas E. Krishnamoorthy, Sriram Applied Physics We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$m thick $β$-Ga$_2$O$_3$ films with electron concentrations in the 10$^{15}$ cm$^{-3}$ range and record-high room temperature Hall electron mobilities of up to 200 cm$^2$/V.s, reaching the predicted theoretical maximum room temperature mobility value for $β$-Ga$_2$O$_3$. Growth of the homoepitaxial films was performed on Fe-doped (010) $β$-Ga$_2$O$_3$ substrates at a growth rate of 1.9 $μ$m/hr using TEGa as the Gallium precursor. To probe the background electron concentration, an unintentionally doped film was grown with a Hall concentration of 3.43 x 10$^{15}$ cm$^{-3}$ and Hall mobility of 196 cm$^2$/V.s. Growth of intentionally Si-Doped films was accomplished by fixing all growth conditions and varying only the silane flow, with controllable Hall electron concentrations ranging from 4.38 x 10$^{15}$ cm$^{-3}$ to 8.30 x 10$^{15}$ cm$^{-3}$ and exceptional Hall mobilities ranging from 194 - 200 cm$^2$/V.s demonstrated. C-V measurements showed a flat charge profile with the N$_D^+$ - N$_A^-$ values correlating well with the Hall-measured electron concentration in the films. SIMS measurements showed the silicon atomic concentration matched the Hall electron concentration with Carbon and Hydrogen below detection limit in the films. The Hall, C-V, and SIMS data indicate the growth of high-quality 4.5 $μ$m thick $β$-Ga$_2$O$_3$ films and controllable doping into the mid 10$^{15}$ cm$^{-3}$ range. These results demonstrate MOCVD growth of electronics grade record-high mobility, low carrier density, and thick $β$-Ga$_2$O$_3$ drift layers for next generation vertical $β$-Ga$_2$O$_3$ power devices. |
| title | Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2407.17089 |