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Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Peterson, Carl, Bhattacharyya, Arkka, Chanchaiworawit, Kittamet, Kahler, Rachel, Roy, Saurav, Liu, Yizheng, Rebollo, Steve, Kallistova, Anna, Mates, Thomas E., Krishnamoorthy, Sriram
Format:	Preprint
Publié:	2024
Sujets:	Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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