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Record-High Electron Mobility and Controlled Low 10$^{15}$ cm$^{-3}$ Si-doping in (010) $β$-Ga$_2$O$_3$ Epitaxial Drift Layers

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Peterson, Carl, Bhattacharyya, Arkka, Chanchaiworawit, Kittamet, Kahler, Rachel, Roy, Saurav, Liu, Yizheng, Rebollo, Steve, Kallistova, Anna, Mates, Thomas E., Krishnamoorthy, Sriram
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Applied Physics
Accesso online:	Acceder al recurso
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