Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866910540282986496 |
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| author | Majer, Lena N. Acartürk, Tolga van Aken, Peter A. Braun, Wolfgang Camuti, Luca Eckl-Haese, Johan Mannhart, Jochen Onuma, Takeyoshi Rabinovich, Ksenia S. Schlom, Darrell G. Smink, Sander Starke, Ulrich Steele, Jacob Vogt, Patrick Wang, Hongguang Hensling, Felix V. E. |
| author_facet | Majer, Lena N. Acartürk, Tolga van Aken, Peter A. Braun, Wolfgang Camuti, Luca Eckl-Haese, Johan Mannhart, Jochen Onuma, Takeyoshi Rabinovich, Ksenia S. Schlom, Darrell G. Smink, Sander Starke, Ulrich Steele, Jacob Vogt, Patrick Wang, Hongguang Hensling, Felix V. E. |
| contents | Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties such as a single-crystal-like bandgap and a low density of F+ centers. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_17194 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films Majer, Lena N. Acartürk, Tolga van Aken, Peter A. Braun, Wolfgang Camuti, Luca Eckl-Haese, Johan Mannhart, Jochen Onuma, Takeyoshi Rabinovich, Ksenia S. Schlom, Darrell G. Smink, Sander Starke, Ulrich Steele, Jacob Vogt, Patrick Wang, Hongguang Hensling, Felix V. E. Materials Science Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties such as a single-crystal-like bandgap and a low density of F+ centers. |
| title | Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2407.17194 |