Monolithic beta-Ga2O3 Bidirectional MOSFET
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arXiv
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| Autori principali: | , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866929437941956608 |
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| author | Sharma, Pooja Lodha, Saurabh |
| author_facet | Sharma, Pooja Lodha, Saurabh |
| contents | We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (~-2.4 V for both gates) with a zero turn-on drain voltage and an on-resistance of approximately 500 ohm-mm. It exhibits a high on/off current ratio of 1e7 in all three conducting modes. In the blocking mode, the device breakdown was measured to be more than +-350 V with a current compliance of 0.5 mA/mm. The estimated breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6 MW/cm2 respectively. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_17263 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Monolithic beta-Ga2O3 Bidirectional MOSFET Sharma, Pooja Lodha, Saurabh Applied Physics We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (~-2.4 V for both gates) with a zero turn-on drain voltage and an on-resistance of approximately 500 ohm-mm. It exhibits a high on/off current ratio of 1e7 in all three conducting modes. In the blocking mode, the device breakdown was measured to be more than +-350 V with a current compliance of 0.5 mA/mm. The estimated breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6 MW/cm2 respectively. |
| title | Monolithic beta-Ga2O3 Bidirectional MOSFET |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2407.17263 |