Si/AlN p-n heterojunction interfaced with ultrathin SiO2
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866912068813193216 |
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| author | Abbasi, Haris Naeem Zhou, Jie Wang, Ding Sun, Kai Wang, Ping Lu, Yi Gong, Jiarui Liu, Dong Liu, Yang Singh, Ranveer Mi, Zetian Ma, Zhenqiang |
| author_facet | Abbasi, Haris Naeem Zhou, Jie Wang, Ding Sun, Kai Wang, Ping Lu, Yi Gong, Jiarui Liu, Dong Liu, Yang Singh, Ranveer Mi, Zetian Ma, Zhenqiang |
| contents | Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_17360 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Si/AlN p-n heterojunction interfaced with ultrathin SiO2 Abbasi, Haris Naeem Zhou, Jie Wang, Ding Sun, Kai Wang, Ping Lu, Yi Gong, Jiarui Liu, Dong Liu, Yang Singh, Ranveer Mi, Zetian Ma, Zhenqiang Applied Physics Materials Science Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices. |
| title | Si/AlN p-n heterojunction interfaced with ultrathin SiO2 |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2407.17360 |