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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2407.17607 |
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| _version_ | 1866910543080587264 |
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| author | Muduli, Manisha Xia, Yongkang Lee, Seunghyun Gajowski, Nathan Chae, Chris Rajan, Siddharth Hwang, Jinwoo Arafin, Shamsul Krishna, Sanjay |
| author_facet | Muduli, Manisha Xia, Yongkang Lee, Seunghyun Gajowski, Nathan Chae, Chris Rajan, Siddharth Hwang, Jinwoo Arafin, Shamsul Krishna, Sanjay |
| contents | There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2407_17607 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes Muduli, Manisha Xia, Yongkang Lee, Seunghyun Gajowski, Nathan Chae, Chris Rajan, Siddharth Hwang, Jinwoo Arafin, Shamsul Krishna, Sanjay Applied Physics Materials Science There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface. |
| title | Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2407.17607 |